Allicdata Part #: | TFZGTR5.6BTR-ND |
Manufacturer Part#: |
TFZGTR5.6B |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 5.6V 500MW TUMD2 |
More Detail: | Zener Diode 5.6V 500mW Surface Mount TUMD2 |
DataSheet: | TFZGTR5.6B Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05594 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Voltage - Zener (Nom) (Vz): | 5.6V |
Tolerance: | -- |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 13 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 2.5V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, Flat Lead |
Supplier Device Package: | TUMD2 |
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TFZGTR5.6B Application Field and Working Principle
Diodes are electronic components used for electrical flow control, in which current can only flow in one direction. Zener diodes are a special type of diode with a low forward resistance, and a reverse breakdown voltage which can be controlled. The TFZGTR5.6B are single Zener diodes that are typically associated with voltage regulation, clamping and switching applications.
Application Fields
The TFZGTR5.6B Zener diode is typically used for voltage regulation, clamping, and switching applications in electronic devices. Its ability to maintain a constant output voltage as input voltages fluctuate, makes it an excellent choice for precision voltage regulation devices in industrial electronics. Additionally, the diode can be used in clamping circuits to limit or control the voltage or in switching circuits to protect sensitive components from harmful electrical spikes.
Working Principle
The TFZGTR5.6B is a single Zener diode. It has a low forward resistance and a reverse breakdown voltage that can be easily controlled. When a current is applied, the negative charge carriers move more rapidly than the positive charge carriers. This causes the depletion of the positively charged layers, which increases the electric field strength. As the electric field strength increases, so does the voltage across the junction and the diode begins to break down shortly after. This breakdown voltage is often referred to as the Zener voltage, and it is this characteristic that makes it suitable for voltage regulation, clamping, and switching applications.
The breakdown voltage of the diode depends on the physical structure of the device and the applied current. It is important to note that the breakdown voltage should not exceed the specified values. Exceeding the specified voltage could cause the diode to overheat, leading to damage and even destruction of the device.
Conclusion
The TFZGTR5.6B is a single Zener diode that is typically used for voltage regulation, clamping, and switching applications. Its low forward resistance and reverse breakdown voltage allow it to maintain a constant output voltage as input voltages fluctuate. It is important to note that the breakdown voltage should not exceed the specified values, as this could cause heat damage or destruction of the device.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
TFZGTR5.6B | ROHM Semicon... | 0.06 $ | 1000 | DIODE ZENER 5.6V 500MW TU... |
TFZGTR27B | ROHM Semicon... | 0.06 $ | 1000 | DIODE ZENER 27V 500MW TUM... |
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TFZGTR18B | ROHM Semicon... | 0.06 $ | 1000 | DIODE ZENER 18V 500MW TUM... |
TFZGTR15B | ROHM Semicon... | 0.06 $ | 1000 | DIODE ZENER 15V 500MW TUM... |
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