Allicdata Part #: | TFZGTR18BTR-ND |
Manufacturer Part#: |
TFZGTR18B |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 18V 500MW TUMD2 |
More Detail: | Zener Diode 18V 500mW Surface Mount TUMD2 |
DataSheet: | TFZGTR18B Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05594 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Voltage - Zener (Nom) (Vz): | 18V |
Tolerance: | -- |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 23 Ohms |
Current - Reverse Leakage @ Vr: | 200nA @ 13V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, Flat Lead |
Supplier Device Package: | TUMD2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The TFZGTR18B is a popular diode in the single series of Zeners. It is a silicon, low-voltage Zenner diode, most often used in electronics circuits with low-voltage power sources. It has a reverse breakdown voltage of 18 volts, and can handle a continuous forward current of 1500 milliamps. It also has a peak power rating of 175 watts.
The primary application field of the TFZGTR18B is for protection against transient overloads and large variations in input current. It is often used in circuit designs where very low reverse leakage characteristics are required, such as in high speed switching of power supplies and other power source circuits. The diode also has a wide range of applications in applications where high-power switching is necessary, such as in communications and processor applications.
The working principle of the TFZGTR18B diode is similar to other Zener diodes. When a certain voltage level is applied to the diode, its current can flow in the reverse direction and create a breakdown voltage. This voltage is often higher than the rated breakdown voltage of the diode, meaning it can handle higher voltages without being damaged. The reverse current is then used to create the desired output voltage, providing very reliable and efficient power source regulation.
The TFZGTR18B diode also provides good electrical isolation, making it suitable for high-speed switching applications and other sensitive circuit designs where leakage current is not desirable. In addition, it offers high stability and a low noise operation, making it ideal for applications where precision voltage regulation is needed. It has a low thermal resistance, making it suitable for applications where heat dissipation is not a major concern.
The TFZGTR18B diode is an effective and reliable device for a wide variety of applications and provides excellent performance in low-voltage circuits. Its reverse breakdown voltage, low thermal resistance and good electrical isolation make it ideal for high-power switching applications, while its high stability and low noise operation make it suitable for circuits where precise voltage regulation is needed.
The specific data is subject to PDF, and the above content is for reference
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