Allicdata Part #: | TFZGTR9.1BTR-ND |
Manufacturer Part#: |
TFZGTR9.1B |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 9.1V 500MW TUMD2 |
More Detail: | Zener Diode 9.1V 500mW Surface Mount TUMD2 |
DataSheet: | TFZGTR9.1B Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.05594 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Voltage - Zener (Nom) (Vz): | 9.1V |
Tolerance: | -- |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 8 Ohms |
Current - Reverse Leakage @ Vr: | 500nA @ 6V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | 2-SMD, Flat Lead |
Supplier Device Package: | TUMD2 |
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Diodes - Zener - Single - TFZGTR9.1B Application Field and Working Principle
TFZGTR9.1B is a diode zener single product specifically designed for use in fast dc circuits and in applications where low reverse leakage current is essential. It is a small-sized product that can be used in almost any electronic design or installation including network equipment, telecommunications, video and audio equipment. This diode can be used in many circuits as a voltage regulator to provide an even voltage output and limit unwanted noise or spikes.
A Zener diode is a special type of diode that allows current to flow in the reverse direction when the voltage in the circuit reaches a certain level known as the Zener voltage. When the voltage reaches the break-down voltage in the reverse direction, a large amount of current starts to flow. In the TFZGTR9.1B, the breakdown voltage is 9.1 V, making it ideal for many applications.
The construction of the TFZGTR9.1B consists of a p-n junction, which is an area where a positively-charged material and a negatively-charged material meet. This p-n junction is a semi-conductive material, meaning it can stop the flow of electrons when forward-biased and allow the flow of electrons when reverse-biased. When a diode is reverse-biased, the p-n junction behaves like a capacitor and cannot allow current to flow.
The actual working principle of the device is quite simple. When forward-BIALASted, the diode allows current to flow in the forward direction, while it blocks the current in the reverse direction. This means that the circuit will only allow current to flow in the power source\'s direction. When reverse-BIALASted, the diode reverses this effect and allows current to flow in the reverse direction, effectively allowing the power source to act as a regulator and keep the voltage consistent.
One of the main advantages of the TFZGTR9.1B is that it is capable of handling large power, and as such, it can be used in applications that require prolonged usage. It also features low reverse leakage current, which is essential for any device that needs to remain functional for long periods of time. The product also features a low forward voltage drop, making it more efficient in terms of power consumption.
The TFZGTR9.1B is suitable for use in a variety of applications, ranging from telecommunications and networking to audio and video and automotive applications. The product can efficiently control the flow of current and protect the system it is installed on from unexpected spikes as well as providing consistent regulation of voltage. Furthermore, its small size means it can easily be installed into almost any electronic design or system.
The specific data is subject to PDF, and the above content is for reference
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