TFZGTR20B

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Voltage - Zener (Nom) (Vz):	20V
Tolerance:	--
Power - Max:	500mW
Impedance (Max) (Zzt):	28 Ohms
Current - Reverse Leakage @ Vr:	200nA @ 15V
Operating Temperature:	-55°C ~ 150°C
Mounting Type:	Surface Mount
Package / Case:	2-SMD, Flat Lead
Supplier Device Package:	TUMD2

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Diodes - Zener - Single, TFZGTR20B Application Field and Working Principle

The TFZGTR20B is a Zener diode intended for use as a voltage reference in power supply regulators, protective circuits and communication systems. The TFZGTR20B is designed for ease of integration into a variety of industrial, residential, and commercial devices. It is the ideal choice for a variety of general-purpose applications, providing reliable performance over extended temperature ranges.The TFZGTR20B is a single Zener diode. It is a two-terminal element composed of a heavily doped P-type semiconductor and an N-type semiconductor connected together in a diode junction. When the PN junction of the diode is reverse biased, a high electric field is created, allowing electrons to break away from the valence bands of the P-type material, across the junction and into the N-type material. When the electric field created is strong enough, electrons will transition from the valence band to the conduction band and create a conductive path through the PN junction, allowing current to flow.The behavior of the TFZGTR20B in the Zeners (breakdown voltage) is the same as that of a standard diode, except it is reverse biased. When the PN junction of the diode is reverse biased, a high electric field is created, allowing electrons to break away from the valence bands of the P-type material, across the junction and into the N-type material. As the voltage is increased further, at a certain point, further electron transition from the valence band to the conduction band is prevented by the formation of an energetic barrier. This barrier prevents the electrons from further traversing the reverse-biased PN junction, and current begins to flow. This breakdown voltage is typically used as the Zener voltage or the working voltage for the TFZGTR20B.In terms of working displacement, the breakdown voltage of a Zener diode is determined solely by the junction\'s physical properties, and not by the applied voltage. The breakdown voltage of the TFZGTR20B is specified at 2.0V. This junction voltage can be adjusted with the choice of a different wafer material, doping concentration, and p-n junction doping profile. It is important to note that the breakdown voltage will depend on the device\'s junction characteristics and temperature.When it comes to the application areas of TFZGTR20B, the device is mainly used as a voltage reference. It is a two-terminal element composed of a heavily doped P-type semiconductor and an N-type semiconductor connected together in a diode junction. The Zener diode is used to accurately source and sink specific voltages, thus maintaining a precise voltage level in power supply regulators and communication systems. The TFZGTR20B is also very suitable for use in protective circuits. It helps protect sensitive components in a power supply from over-voltage, over-current, over-temperature and other fault conditions, by diverting excess current away from the load.In addition, the TFZGTR20B can be used as a switching and temperature sensing element, as well as a current regulator and driver. Its low breakdown voltage and high current capabilities make it the ideal choice for these applications.In conclusion, the TFZGTR20B is a single Zener diode intended for various applications in a variety of industrial, residential, and commercial devices. It is mainly used as a voltage reference in power supply regulators, protective circuits and communication systems. It also finds uses as a switching and temperature sensing element, current regulator and driver, etc. The TFZGTR20B employs an N-type semiconductor and a P-type semiconductor connected in a diode junction in order to find its application in all these areas.

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