TJ10S04M3L(T6L1,NQ Allicdata Electronics
Allicdata Part #:

TJ10S04M3L(T6L1NQ-ND

Manufacturer Part#:

TJ10S04M3L(T6L1,NQ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET P-CH 40V 10A DPAK-3P-Channel 40V 10A (Ta) 2...
More Detail: N/A
DataSheet: TJ10S04M3L(T6L1,NQ datasheetTJ10S04M3L(T6L1,NQ Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: U-MOSVI
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 44 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Power - Max: --
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 10V
FET Feature: --
Power Dissipation (Max): 27W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: --
Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   sales@allicdata.com


1. Features

    1. AEC-Q101 qualified

    2. Low drain-source on-resistance: RDS(ON) = 33.8 m Ω (typ.) (VGS = -10 V)

    3. Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)

    4. Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)

2. Applications 

    1. Automotive 

    2. Motor Drivers 

    3. DC-DC Converters 

    4. Switching Voltage Regulators

3. Pin configuration

      image.png

4. Package dimensions

       image.png

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