TJ15P04M3,RQ(S

Series:	U-MOSVI
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	15A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	36 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:	2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	26nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1100pF @ 10V
FET Feature:	--
Power Dissipation (Max):	29W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DPAK
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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TJ15P04M3 is a silicon N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and the current in the device is controlled by the gate voltage, making it an ideal choice for various applications which require high-speed operation, low power consumption, and high voltage input. This MOSFET is manufactured using advanced MOS technology, allowing for low on-resistance, low input capacitance, and high operating temperature range. The TJ15P04M3 is a single-die transistor, which is widely used in different electronic devices and circuits. The device can be easily soldered onto a printed circuit board, providing a secure and reliable connection, and is also ideal for use in high speed switching applications. The working principle of the TJ15P04M3 is based on the movement of charge carriers through the gate and drain of the transistor. The gate is controlled by an external voltage, which causes a change in the charge density of the gate. This change in charge density results in a change in the direction of the electric current flow, allowing for the device to act as either an amplifier or a switch depending on the input voltage. Due to its low on-resistance, low input capacitance, and high operating temperature range, the TJ15P04M3 is ideal for various applications where power consumption needs to be kept low and a reliable connection is required. Common applications for this device include power supplies, portable computers, medical equipment, automotive equipment, and digital circuit applications. The TJ15P04M3 can be used in various circuits for high-speed switching and high voltage input. This device can also be used in power supply circuits to ensure low power consumption. Additionally, the device is suitable for use in audio amplifiers, where its small size, low power consumption, and fast switching capability make it an ideal choice. The TJ15P04M3 provides superior performance compared to other MOSFETs in the market due to its advanced MOS technology, which allows for reducing the input capacitance and increasing the operating temperature range. This device is also easy to install, since it can easily be soldered onto a printed circuit board. In conclusion, the TJ15P04M3 is an excellent choice for any application which requires high-speed operation, low power consumption, and high voltage input. Due to its advanced MOS technology, this device can provide superior performance and can easily be soldered onto a PCB. This makes it an ideal choice for various applications where power consumption is critical, as well as for use in audio amplifiers for fast switching capability.

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