Allicdata Part #: | TJ30S06M3L(T6L1NQ-ND |
Manufacturer Part#: |
TJ30S06M3L(T6L1,NQ |
Price: | $ 0.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 60V 30A DPAK-3 |
More Detail: | P-Channel 60V 30A (Ta) 68W (Tc) Surface Mount DPAK... |
DataSheet: | TJ30S06M3L(T6L1,NQ Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.46151 |
Series: | U-MOSVI |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 21.8 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Vgs (Max): | +10V, -20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3950pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 68W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK+ |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The TJ30S06M3L(T6L1,NQ is an enhancement type MOSFET (metal oxide semiconductor field effect transistor) from the well-known Toshiba 30S06 series. It is designed for applications that require robust and superior performance, such as automotive system design. As a single MOSFET, this device is ideal for the switching of various loads including those under high voltage, or where noise reduction is critical.
The device has a drain source voltage of 600 V, 10A (continuous) drain current, and a total gate charge of 3.2 nC. It includes uniquely designed ST7 transistors and an advanced self-alignment gate oxide process that offers superior performance and robustness over a wide range of temperatures and across different operating conditions. The high reliability of the TJ30S06M3L(T6L1,NQ device makes it an excellent choice for applications such as motor control, power supply and lighting systems.
Additionally, the TJ30S06M3L(T6L1,NQ has a low input capacitance and is highly efficient when used in all forms of switching designs, such as a half-bridge circuit. It has superior temperature stability and immunity against static electricity, making it suitable for industrial applications and automotive systems. The device also has a low on-state resistance which makes it highly energy efficient.
This single MOSFET utilizes the enhancement type structure, which allows the device to be completely turned on and off by applying a voltage signal to the gate. In an enhancement type MOSFETs, the substrate potential must be zero in order to turn on the MOSFET and exert control over the device. The gate voltage must be higher than the source voltage in order to turn the device on, allowing the source to flow to the drain. The channel of this single MOSFET is controlled by the gate-source voltage, which is the voltage applied to the gate and the voltage between the source and the body of the device.
The TJ30S06M3L(T6L1,NQ has a high switching speed, allowing for fast response and control over various loads. This single MOSFET also provides a low drain-source on resistance, which ensures that the device receives minimal power loss. This single MOSFET is ideal for applications that require high-speed switching and low power loss, such as in motor controllers and power converters.
The TJ30S06M3L(T6L1,NQ single MOSFET provides a wide range of features, including high performance, robustness, and excellent efficiency. It is also reliable and safe to use, making it a great choice for automotive and industrial applications. This single MOSFET is a great way to reduce costs, increase reliability, and provide superior performance in many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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