Allicdata Part #: | TJ60S04M3L(T6L1NQ-ND |
Manufacturer Part#: |
TJ60S04M3L(T6L1,NQ |
Price: | $ 0.62 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 40V 60A DPAK-3 |
More Detail: | P-Channel 40V 60A (Ta) 90W (Tc) Surface Mount DPAK... |
DataSheet: | TJ60S04M3L(T6L1,NQ Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.55751 |
Specifications
Series: | U-MOSVI |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 10V |
Vgs (Max): | +10V, -20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6510pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 90W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK+ |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Description
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The TJ60S04M3L is a single chip, N-channel enhancement mode MOSFET that operates in the region of 60V. Manufactured by TOSHIBA and part of their T6L1 series, this powerful MOSFET is widely used and available in TO-220, TO-220F Visual and SOP packages. With a drain current rating of 4 Amps, this device has an avalanche rating of up to 36A, making it ideal for use in power supplies, medical equipment and robotics applications.The TJ60S04M3L is a MOSFET transistor, manufactured to high standards and widely used in a variety of industries. MOSFET transistors are special types of transistors, which control the movement of electric charge in a circuit. They are composed of three terminals: one source, a drain, and a gate. In the TJ60S04M3L, the gate acts as the control point, allowing electric charge to flow from the source to the drain. The source is charged positively and the drain negatively. When a positive voltage is applied to the gate, it attracts a negative charge, allowing current to flow from source to drain. When a negative voltage is applied to the gate, the charge repels and the current is stopped.The TJ60S04M3L has a maximum drain-source breakdown voltage of 60V and a gate threshold voltage of 4V. It is also certified for super low on-resistance, with a maximum of 0.0048Ω. This reduces heat generation, increases the device\'s efficiency, and provides reduced switching times. In addition, the TJ60S04M3L has an output capacitance of 7 pF, a maximum junction temperature of 150°C, drain-source on-resistance of 0.0054Ω, and a power dissipation of 1.1W.The TJ60S04M3L is a versatile device and suitable for a wide variety of applications. With its low power consumption and high switching speeds, it is ideal for use in power supplies, medical equipment, automated industrial systems, robotics, and many other electronic applications. Additionally, it is a cost-effective solution for applications requiring a reliable and efficient transistor.In summary, the TJ60S04M3L is a powerful and reliable single chip, N-channel enhancement mode MOSFET which operates in the region of 60V. It is certified for super low on-resistance and has an output capacitance of 7 pF, a maximum junction temperature of 150°C, and a drain-source on-resistance of 0.0054Ω. With its low power consumption, high switching speeds, and wide range of applications, the TJ60S04M3L is an ideal solution for a variety of electronic projects.
The specific data is subject to PDF, and the above content is for reference
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