| Allicdata Part #: | TJ80S04M3L(T6L1NQ-ND |
| Manufacturer Part#: |
TJ80S04M3L(T6L1,NQ |
| Price: | $ 0.71 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET P-CH 40V 80A DPAK-3 |
| More Detail: | P-Channel 40V 80A (Ta) 100W (Tc) Surface Mount DPA... |
| DataSheet: |  TJ80S04M3L(T6L1,NQ Datasheet/PDF |
| Quantity: | 1000 |
| 2000 +: | $ 0.63575 |
| Series: | U-MOSVI |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 40V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Rds On (Max) @ Id, Vgs: | 5.2 mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 158nC @ 10V |
| Vgs (Max): | +10V, -20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 7770pF @ 10V |
| FET Feature: | -- |
| Power Dissipation (Max): | 100W (Tc) |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | DPAK+ |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The TJ80S04M3L (T6L1, NQ) is a single N channel MOSFET. It is a type of transistor which is often used in computer and communication systems. It is widely used in power and RF systems.
A MOSFET is a field-effect transistor which operates by using a conducting channel between the source and drain region. The gate controls the current flow by creating an electric field with an applied voltage. It can be used as an electronic switch, amplifier, or voltage-controlled resistor.
The TJ80S04M3L is designed for high power switching to provide a low resistance when on. It features a wide operating voltage range, fast switching time, and low power dissipation. It is suitable for use in both high and low power applications. The device is also compatible with low-voltage operations down to 7V.
The TJ80S04M3L has a rating of 100V, 2.5A, and 25W. It has a maximum rise and fall time of 2.5nS, making it ideal for high frequency operations. It is an excellent choice for a variety of applications, including switching power supplies, automotive circuits, and charge pumps.
The TJ80S04M3L has a special feature known as an integral diode. The diode allows it to be used in circuits which require bidirectional protection. It also enables the device to be used in applications that require protection against reverse voltage.
The TJ80S04M3L is constructed using a dielectric oxide film to insulate the gate and source electrode, allowing ultra-low off-state leakage current. Its gate source leakage current is typically less than 1nA. The device also features fast switching with low gate charge and output capacitance.
The TJ80S04M3L is designed to be used as either a switch or an amplifier. As a switch, it can be used to control high currents or to provide bidirectional protection in circuits. As an amplifier, it can be used to amplify audio signals.
Overall, the TJ80S04M3L is a versatile and reliable MOSFET. It is suitable for use in a wide array of applications, making it an excellent choice for power and RF systems. Its features make it an excellent choice for high power switching, automotive circuits, and charge pumps.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TJ80S04M3L(T6L1,NQ | Toshiba Semi... | 0.71 $ | 1000 | MOSFET P-CH 40V 80A DPAK-... |
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