Allicdata Part #: | TK15A50D(STA4QM)-ND |
Manufacturer Part#: |
TK15A50D(STA4,Q,M) |
Price: | $ 1.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 500V 15A TO-220SIS |
More Detail: | N-Channel 500V 15A (Ta) 50W (Tc) Through Hole TO-2... |
DataSheet: | TK15A50D(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 1.11969 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | π-MOSVII |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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A TK15A50D (STA4,Q,M) is a type of Field Effect Transistor (FET) specifically a Metal Oxide Semiconductor FET (MOSFET). As its name suggests, it is made of metal oxide sandwiched between two dielectric layers. It has three terminals, two of which are source and gate, while the third one is drain.
As an electronic component, the TK15A50D (STA4,Q,M) is widely used in power electronic circuits. It is capable of controlling large currents with high efficiency as well as switching large voltages. It can also be used for rectifying, voltage control, and other circuit applications.
Let’s take a closer look at the working principle behind the TK15A50D (STA4,Q,M). It depends on a metal gate electrode between the semiconductor layers and an insulated gate terminal. When a voltage is applied to the gate terminal, it creates an electric field that changes the charge of the carriers in the metal oxide layer, allowing current to flow between the source and drain terminals.
The TK15A50D (STA4,Q,M) also has certain advantages over other FETs. It has a fast switching speed, high input impedance, low drive power, low output capacitance, and low on-resistance. This makes it ideal for applications such as switching power supplies, inverters, motor controls, battery chargers, and other power electronics applications.
In addition, the TK15A50D (STA4,Q,M) has a high power-handling capability and can be used in designs requiring higher load currents. It is also capable of providing lower RDS (Output Resistance) on, allowing less power loss and higher efficiency. Moreover, it’s able to handle higher reverse voltages, making it suitable for applications in solar, wind, and other renewable energy systems.
The TK15A50D (STA4,Q,M) is an essential part in any power electronics design due to its high efficiency, fast switching speed, high input impedance, low drive power, low output capacitance, and low on-resistance. It is also suitable for use in many applications such as switching power supplies, inverters, motor controls, battery chargers, and other power electronics applications. It is indispensable for designers who wish to build energy-efficient and reliable power systems.
The specific data is subject to PDF, and the above content is for reference
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