TK19A45D(STA4,Q,M) Allicdata Electronics
Allicdata Part #:

TK19A45D(STA4QM)-ND

Manufacturer Part#:

TK19A45D(STA4,Q,M)

Price: $ 2.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 450V 19A TO-220SIS
More Detail: N-Channel 450V 19A (Ta) 50W (Tc) Through Hole TO-2...
DataSheet: TK19A45D(STA4,Q,M) datasheetTK19A45D(STA4,Q,M) Datasheet/PDF
Quantity: 1000
50 +: $ 2.14855
Stock 1000Can Ship Immediately
$ 2.39
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: π-MOSVII
Rds On (Max) @ Id, Vgs: 250 mOhm @ 9.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 450V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TK19A45D(STA4,Q,M) is a bipolar junction transistor (BJT) that is commonly used as a power transistor switch. It is a three-terminal device comprised of a source, gate, and drain. It is typically with an N-channel for P-channel type of transistor. This type of transistor is able to handle larger current loads than standard MOSFETs and have large gain values.

The TK19A45D(STA4,Q,M) is commonly used in many fields such as industrial equipment, communication electronics, medical electronics and automotive electronics. It is able to control the current flowing through it and has multiple applications applicable to a wide variety of industries.

The working principle of the TK19A45D(STA4,Q,M) is based on the characteristics of an N-channel or P-channel MOSFETs. When the gate voltage is adequate, the current running through the transistor will increase and the voltage at the drain will drop, turning the transistor on. When the gate voltage increases, the current running through the transistor will decrease and the drain will rise, turning the transistor off.

The TK19A45D(STA4,Q,M) transistors have a high breakdown voltage and can switch current up to 40 V. They are also able to be used in a wide temperature range from -55°C to +150°C. They have a typical gain of 90, with a minimum gain of selecting up to 250. The power dissipation of the transistor can reach up to 25 W for a continuous period of time.

The TK19A45D(STA4,Q,M) is a cost-effective solution for applications which require large power switching and/or high gain. They are an efficient way to control electricity and are reaching more applications for their cost-performance advantages.

The specific data is subject to PDF, and the above content is for reference

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