TK1K9A60F,S4X Allicdata Electronics
Allicdata Part #:

TK1K9A60FS4X-ND

Manufacturer Part#:

TK1K9A60F,S4X

Price: $ 0.73
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: PB-F POWER MOSFET TRANSISTOR TO-
More Detail: N-Channel 600V 3.7A (Ta) 30W (Tc) Through Hole TO-...
DataSheet: TK1K9A60F,S4X datasheetTK1K9A60F,S4X Datasheet/PDF
Quantity: 301
1 +: $ 0.66150
50 +: $ 0.52744
100 +: $ 0.46154
500 +: $ 0.35790
1000 +: $ 0.28256
Stock 301Can Ship Immediately
$ 0.73
Specifications
Vgs(th) (Max) @ Id: 4V @ 400µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS
Mounting Type: Through Hole
Operating Temperature: 150°C
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Series: U-MOSIX
Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TK1K9A60F,S4X is a field-effect transistor (FET) initially developed and manufactured by Infineon Technologies. It is a single-discrete subminiature (SOT-323) N-channel FET, which is primarily used in applications such as low voltage, low-side switches with integrated driver circuit, general purpose switching, line reverse and logic level switch, and power management.

FETs, or Field Effect Transistors, are three-terminal unipolar devices characterised by their gate connections – typically gate, source, and drain. TK1K9A60F,S4X transistors are an example of VS-MOSFETs (also known as vertical-structure MOSFETs), which can be found in mobile phones and static-sensitive applications due to their strong robustness.

The TK1K9A60F,S4X is designated as “K” series, and along with providing good signal isolation and fast switching time, it can withstand up to 150°C junction temperatures and is immune to electro-static discharge.. It provides precise control over the voltage applied to the gate terminal, allowing for uniform temperature distribution and precise control of the electrical characteristics of the device.

The working principle of the TK1K9A60F,S4X is simple. The electric field induced by the voltage applied to the gate terminal increases or decreases the resistance of the channel between the source and the drain depending on the polarities of the applied voltage. In an N-channel device, when the field is increased, the channel narrows which in turn increases its resistance, while a decrease in the field will decrease the resistance of the N-channel.

The TK1K9A60F,S4X’s primary application field is in low voltage switch applications such as logic level switches, power management, line reversal and switch controls. The device is also popularly used to replace mechanical switches in appliances, as well as in low voltage DC supplies and battery systems. Due to its robust design, the TK1K9A60F,S4X is also becoming popular in the industry as it is suitable for mobile phone applications with low voltage consumption.

The TK1K9A60F,S4X is also finding uses in precision medical device production as well as in automotive applications, such as switch control and power monitoring. It can also be used for protection against short circuits, overloads and surges.

In conclusion, the TK1K9A60F,S4X is an N-channel FET designed for low voltage applications with a robust design to withstand harsh conditions. The working principle of the device is simple, and its primary application field is in low voltage switch applications such as low-side switches with integrated driver circuit, general purpose switching, line reversal and switch controls. With its wide range of applications and robust design, the TK1K9A60F,S4X is becoming increasingly popular in the industry.

The specific data is subject to PDF, and the above content is for reference

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