TK22E10N1,S1X

Vgs(th) (Max) @ Id:	4V @ 300µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	72W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1800pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	28nC @ 10V
Series:	U-MOSVIII-H
Rds On (Max) @ Id, Vgs:	13.8 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	52A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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TK22E10N1,S1X is a type of Field Effect Transistor (FET) commonly referred to as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). A MOSFET is essentially an electronically-controlled switch for electrical signals. It amplifies current or voltage by effectively allowing a regulated amount of current to pass through the device.MOSFETs are commonly used in a wide variety of applications including switching power supplies, amplifiers, and logic circuits. They can also be used as a voltage regulator or current regulator, as well as a signal path device. In addition, they can be used to control the speed of motors, as well as act as an input/output switch in digital circuits.The TK22E10N1,S1X is a single FET, which means it consists of a single channel of either n-type or p-type conduction. This allows the device to have a higher current rating and a wider voltage range than many other FETs.The working principle behind a MOSFET is based on a phenomenon known as "field effect," in which a voltage applied to the gate terminal is used to modify the current flow between the drain and source of the device. This is accomplished by forming a charge-controlled layer of insulation between the gate electrode and the body of the device. This layer, known as the gate insulator, prevents current from flowing from the gate to ground, thus controlling the current flowing in the device.When a positive voltage is applied to the gate terminal, the gate insulator acts as a solid block, preventing current flow. However, when a negative voltage is applied, the gate insulator acts as a semiconductor, allowing current to flow between the source and drain of the device. Thus, when a voltage is applied to the gate terminal, the current flow in the device can be regulated by controlling the voltage applied.Because the gate voltage can be varied easily, the FET can be used to switch a load on and off quickly, making it ideal for use in switching power supplies and analog circuitry. In addition, because the gate voltage can be varied in a linear fashion, the FET can be used as an input/output switch in digital circuits, allowing for precise control of signals.In summary, TK22E10N1,S1X is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) commonly used in a wide variety of applications including switching power supplies, amplifiers, and logic circuits. It acts as an electronically-controlled switch for electrical signals, controlling the current flow by varying the gate voltage applied to it. By controlling the voltage, the device can be used to switch a load on and off quickly, making it ideal for use in switching power supplies and electronic circuits.

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