TK28A65W,S5X Allicdata Electronics
Allicdata Part #:

TK28A65WS5X-ND

Manufacturer Part#:

TK28A65W,S5X

Price: $ 4.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 650V 27.6A TO-220SIS
More Detail: N-Channel 650V 27.6A (Ta) 45W (Tc) Through Hole TO...
DataSheet: TK28A65W,S5X datasheetTK28A65W,S5X Datasheet/PDF
Quantity: 1000
1 +: $ 3.65400
50 +: $ 2.93429
100 +: $ 2.67340
500 +: $ 2.16481
1000 +: $ 1.82574
Stock 1000Can Ship Immediately
$ 4.02
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Series: DTMOSIV
Rds On (Max) @ Id, Vgs: 110 mOhm @ 13.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TK28A65W S5X is a silicon N-Channel Enhancement mode Field Effect Transistor, better known as an eFET. It was released by one of the largest manufacturers in the semiconductor industry - Toshiba. It has a wide range of applications and a straightforward operating principle. This article will provide an overview of the TK28A65W S5X\'s application field, working principle, and features.

Application Field of the TK28A65W S5X eFET

The TK28A65W S5X is a versatile electronic component, as it can be utilized in a range of applications. It is often used in power devices such as power inverters, power adapters, and other applications in which power consumption is an issue. In addition, it can be used in various types of analogue electronics such as amplifiers and voltage regulators due to its low resistance. It is also frequently used in large display monitors and flat panel televisions, where its low power consumption and high switching speed makes it an ideal choice.

Working Principle of the TK28A65W S5X eFET

The TK28A65W S5X eFET is an N-Channel Enhancement mode Field Effect Transistor. This means that the transistor can be switched on and off using a voltage applied to the gate. When a voltage is applied to the gate, the device is switched on and allows current to flow from the source to the drain. When the voltage is removed, the device switches off and no current flows.

The device\'s low on-resistance and fast switching speed makes it an ideal choice for when high-efficiency and fast switching speeds are desired. In addition, the device has a gate threshold voltage designed for ease of use, making it easy for designers to both understand and control.

Features of the TK28A65W S5X eFET

The TK28A65W S5X eFET has several features which make it an ideal choice for a range of applications. It has a low on-resistance of 0.3 Ω, which allows for low power consumption and high efficiency. In addition, it has a high switching speed of 100 ns, meaning it can handle very fast switching frequencies, making it ideal for high frequency applications such as power inverters, power adapters, and other power devices.

The device also has a gate threshold voltage designed for ease of use. This allows for easy use and control of the device, making it a convenient choice for designers.

Overall, the TK28A65W S5X eFET is a versatile and reliable silicon N-Channel Enhancement mode Field Effect Transistor. It has a wide range of applications and a straightforward operation, making it an ideal choice for a variety of projects. Its low on-resistance and fast switching speed make it an ideal choice for high frequency applications, while its gate threshold voltage design makes it convenient and easy to use.

The specific data is subject to PDF, and the above content is for reference

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