TK2Q60D(Q) Allicdata Electronics
Allicdata Part #:

TK2Q60D(Q)-ND

Manufacturer Part#:

TK2Q60D(Q)

Price: $ 0.51
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 600V 2A PW-MOLD
More Detail: N-Channel 600V 2A (Ta) 60W (Tc) Through Hole PW-MO...
DataSheet: TK2Q60D(Q) datasheetTK2Q60D(Q) Datasheet/PDF
Quantity: 1000
200 +: $ 0.46752
Stock 1000Can Ship Immediately
$ 0.51
Specifications
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: PW-MOLD2
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Series: π-MOSVII
Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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The TK2Q60D is a silicon n-channel amplification MOS field effect transistor. It features the latest in process technology and heatsinking techniques to guarantee top performance together with excellent power dissipation and current distribution capabilities. This MOSFET is a high power device, but it has a small physical footprint. It is ideal for use in power control applications, where a high level of current handling capacity and efficiency is required.

The TK2Q60D is designed for high speed pulse operation and is suitable for all types of power supply and voltage control circuits. Its high switching speed and low power consumption make it suitable for high frequency power supply applications. It can also be used in any circuit requiring fast on-off switching, such as high speed motor control.

The TK2Q60D is a single-ended MOSFET, which means it has a single channel and is voltage driven. A voltage applied to the channel allows electric current to flow through it, leading to the amplification of the input. The intrinsic capacitance of the transistor, along with the total capacitance of the gate and source, affects the device\'s gain and frequency response.

The three main regions of a MOSFET are the source, drain, and gate. The source is the region where current enters the transistor. The drain is the region where the current leaves the transistor. The gate is the region between the source and drain where the control voltage is applied. A reverse bias voltage is applied to the gate, which controls the current flowing through the channel. When the voltage is increased, the current will increase, and when the voltage is decreased, the current will decrease. The TK2Q60D features a low drain-source on-resistance of 2.3Ω, which helps to reduce power loss and allows for a higher current flow.

The TK2Q60D works best when used in applications where fast switching is required. It is suitable for use in high speed pulse power supplies, and its low capacitance helps to reduce switching losses compared to other transistors. The TK2Q60D is also suitable for use in motor control circuits, where its fast response time helps to increase the efficiency of the system. Additionally, its low power consumption allows for more efficient operation.

In conclusion, the TK2Q60D is a reliable and efficient MOSFET suitable for a variety of power supply and voltage control applications. Its single-ended design and low capacitance offers excellent switching performance at high speeds, and its low power consumption makes it an ideal choice for power control applications. The TK2Q60D is a reliable and cost-effective solution for many types of power control applications.

The specific data is subject to PDF, and the above content is for reference

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