TK32E12N1,S1X

Vgs(th) (Max) @ Id:	4V @ 500µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	98W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2000pF @ 60V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	34nC @ 10V
Series:	U-MOSVIII-H
Rds On (Max) @ Id, Vgs:	13.8 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drain to Source Voltage (Vdss):	120V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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TK32E12N1,S1X is a single MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) that can be found in many electronic circuits. It is a three-terminal active device, with one input/control terminal (the Gate) and two output terminals (the Source and the Drain). A MOSFET acts as a voltage-controlled switch, with the Gate terminal controlling the flow of current between the Source and the Drain. The TK32E12N1,S1X is a low-cost, robust and high-performance MOSFET designed for use in a variety of applications from analog-to-digital conversion to battery protection and more. It has a maximal drain-source On-resistance of 32mΩ at 10V and can handle up to 12A of drain current. In its given form, the TK32E12N1,S1X is applicable in a wide range of circuits, from automotive and industrial automation systems to consumer electronics and solar power inverters. It is an excellent choice for a variety of projects, due to its low cost, high performance and wide operating range. The TK32E12N1,S1X MOSFET works on the principle of MOSFET operation. In essence, the MOSFET is a three-terminal electronic device, which consists of a channel connecting two source terminals and one gate terminal. The channel is made of semiconductor material, and is the basis of the device’s operation. The source and gate terminals are connected to the channel, while the drain terminal is connected to the source terminals. When a voltage is applied to the gate terminal, it creates an electric field across the channel. This electric field changes the resistance of the channel, allowing current to flow between the source and drain terminals at a current level determined by the applied voltage. The TK32E12N1,S1X is built with an N-channel MOSFET, meaning that the electric field from the Gate terminal is used to control the flow of electrons from the Source to the Drain. This type of MOSFET has a low source-to-drain On-resistance and can provide low levels of leakage current, making it ideal for use in low-power applications. The TK32E12N1,S1X is a robust and reliable MOSFET, capable of withstanding high temperature, high voltage and high current. This makes it an excellent choice for a variety of automotive, industrial, and consumer electronics applications. It is capable of handling up to 12A of drain current, and has an on-resistance of 32mΩ at 10V. This low-cost MOSFET is an ideal choice for a variety of projects and applications, due to its wide temperature operating range, high current handling capability and low resistance. It is well suited for use in analog-to-digital conversion, solar inverters, automotive and industrial electronics, portable communications, computer peripheral and telecom equipment, PLC systems and battery protection circuits. In conclusion, the TK32E12N1,S1X is an excellent choice for a variety of projects and applications. It is a single MOSFET, capable of handling up to 12A of drain current and has a maximal drain-source on-resistance of 32mΩ at 10V. It is a robust and reliable device, capable of withstanding high temperatures and high voltages. It is well suited for use in analog-to-digital conversion, solar inverters, automotive and industrial electronics, portable communications, computer peripheral and telecom equipment, PLC systems and battery protection circuits. With its low cost and excellent performance, the TK32E12N1,S1X is an ideal choice for a variety of projects and applications.

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