TK3A60DA(Q,M)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TK3A60DA (Q,M) transistor is part of the single n-channel enhancement mode power field-effect transistor (FET) family. It is an integrated power switch that can switch a large current at a low voltage drop by using a small voltage applied to the gate. This transistor was developed for the purpose of providing a low-cost solution for fast switching applications where the power to be switched is normally large.

The TK3A60DA (Q,M) transistor is constructed from two different semiconductor materials, namely silicon and gallium arsenide. It is packaged in a hermetically sealed, outside-diameter package that is rated at 100 mA per channel. It has an on-resistance (R_DS(ON)) of between 20 and 400 mOhms and its maximum current handling capabilities are rated at about 40A.

The TK3A60DA (Q,M) works in an enhancement-mode such that the current carrying capability of the device is controlled by the voltage applied to the gate transistor. This is achieved by the transistor being biased in an “on-state” or forward threshold voltage or “V_th”. The bias voltage allows electrons to tunnel from the drain to the source and the drain current flows through the device.

This transistor can be used in a variety of applications due to its wide range of features. It is used in power supplies, solar cells, and in DC-DC converters used in automobiles. It is also found in Fan controllers, low-loss motor drivers, low voltage power management applications such as DC-DC converters, smart phones and tablets.

The TK3A60DA (Q,M) can also be used as an active shunt resistor. In this application, the control voltage is compared with a reference voltage, and the gate of the device is adjusted in order to maintain the desired current flow. This can be used in power converters, power supplies and AC or DC motor control.

The TK3A60DA (Q,M) is a cost-effective device for fast and efficient applications. It offers a wide range of features and is suitable for applications requiring large current switching and low voltage drops. Its two-material construction provides for greater efficiency than other FETs, making it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference