Allicdata Part #: | TK42A12N1S4X-ND |
Manufacturer Part#: |
TK42A12N1,S4X |
Price: | $ 1.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 120V 42A TO-220 |
More Detail: | N-Channel 120V 42A (Tc) 35W (Tc) Through Hole TO-2... |
DataSheet: | TK42A12N1,S4X Datasheet/PDF |
Quantity: | 23 |
1 +: | $ 1.05210 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 60V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
Series: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 9.4 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 120V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK42A12N1,S4X is a single transistor field effect device that has numerous different applications and a unique working principle. The device belongs to the family of Transistors - FETs, MOSFETs - Single, making it an ideal choice for use in circuitry applications. The TK42A12N1,S4X device is compact in size, while still being capable of a wide range of applications. The device is powered by low-voltage currents and its power dissipation is kept to a minimum. This feature makes the device ideal for use in a wide range of portable electronics and communications devices.
The TK42A12N1,S4X device features an arrangement of three terminals called the source, the drain and the gate. These terminals control the current at which electrons move between the two terminals. The voltage applied to the gate terminal controls the current flowing from the drain to the source. The gate terminal must be electrically isolated from the drainand the source terminal. This type of field effect transistor device is usually referred to with the acronym FET.
A MOSFET (metal-oxide-semiconductor FET) is similar to the field effect transistor, but uses a different set of principles than regular field effect transistors. The MOSFET works off of a set of terms known as threshold voltage and transconductance. The MOSFET is composed mainly of two elements, the gate dielectric layer, and a metal gate contact layer. The gate dielectric is the non-conductive element that separates the two metal contacts. When a voltage is applied to the metal gate contact, this allows the electrons to move between them, allowing the device to amplify or switch an electrical current.
The TK42A12N1,S4X device uses the MOSFET technology to control the current that flows through the device. This current is highly regulated and can be adjusted as necessary. This allows the device to be used in a wide range of applications. It can be used in portable electronic or telecommunication devices as a switch device or a regulator, or it can be used in a power supply or amplifier circuit. Additionally, the TK42A12N1,S4X can be used in optical circuits or circuitry that requires extremely low power levels.
The TK42A12N1,S4X device is extremely reliable and has a long lifespan, making it an ideal choice for use in a wide range of different applications. It is also extremely efficient, providing current levels that can be easily regulated for a wide range of different tasks. Furthermore, the device\'s low power consumption makes it ideal for use in applications that require extreme levels of power efficiency. The TK42A12N1,S4X is a reliable, efficient and low-power device that can be used for a wide range of different applications.
The specific data is subject to PDF, and the above content is for reference
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