
Allicdata Part #: | TK45P03M1RQ(S-ND |
Manufacturer Part#: |
TK45P03M1,RQ(S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 45A DPAK-3 |
More Detail: | N-Channel 30V 45A (Ta) Surface Mount DPAK |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.3V @ 200µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | U-MOSVI-H |
Rds On (Max) @ Id, Vgs: | 9.7 mOhm @ 22.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 45A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TK45P03M1,RQ is a discrete MOSFET device that is the optimal solution for many different applications. This type of transistor is based on a single N-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). As such, it offers a smaller size, lower power consumption, and excellent switching performance.
MOSFETs are often utilized in various applications such as switching, power control, and signal amplification. Due to their characteristics, MOSFETs are ideal for power switches, DC-DC converters, motor control, switching power supplies, inverters, and more.
The TK45P03M1,RQ is a N-Channel enhancement mode MOSFET which acts as a two-terminal current-controlled switch. It has a high input impedance and low input capacitance, allowing it to instantly switch on and off with higher switching frequency. It also operates at a lower threshold voltage than conventional MOSFETs, meaning that it can be driven by lower voltage levels and can provide higher switching speed as well.
The TK45P03M1,RQ requires no gate bias current, reducing complex circuit designs and cost. With improved avalanche energy, it can also perform better in high surge current environments. The device can operate in high temperatures, extremely high pulse current and power environments, allowing it to be used in a wide variety of applications.
When the gate voltage of the TK45P03M1,RQ is higher than its threshold voltage, the device turns on and allows current to flow from source to drain, creating very low on-resistance. When the gate voltage is below the threshold voltage, the device turns off and prevents the current from flowing. The on-resistance is determined by the magnitude of the gate voltage and the high voltage drain level. With its high performance, this type of MOSFET is ideal for applications requiring high power switching such as DC to DC converters and motor control systems.
The TK45P03M1,RQ is a versatile discrete MOSFET device manufactured in a small surface mount package. It combines low on-resistance, high performance, and high reliability into an excellent choice for a range of applications. With its high performance and low cost, it is the perfect device for many different applications.
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Part Number | Manufacturer | Price | Quantity | Description |
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TK45P03M1,RQ(S | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 45A DPAK-... |
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