| Allicdata Part #: | TK4R3E06PLS1X-ND |
| Manufacturer Part#: |
TK4R3E06PL,S1X |
| Price: | $ 1.58 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | X35 PB-F POWER MOSFET TRANSISTOR |
| More Detail: | N-Channel 60V 80A (Tc) 87W (Tc) Through Hole TO-22... |
| DataSheet: |  TK4R3E06PL,S1X Datasheet/PDF |
| Quantity: | 1594 |
| 1 +: | $ 1.43640 |
| 50 +: | $ 1.15744 |
| 100 +: | $ 1.04164 |
| 500 +: | $ 0.81017 |
| 1000 +: | $ 0.67128 |
| Vgs(th) (Max) @ Id: | 2.5V @ 500µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 87W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3280pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 48.2nC @ 10V |
| Series: | U-MOSIX-H |
| Rds On (Max) @ Id, Vgs: | 7.2 mOhm @ 15A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
TK4R3E06PL,S1X is a single enhancement-mode N-channel MOSFET available in a TO-252SMDS package. This field-effect transistor delivers reliable performance in a wide variety of applications, in particular in power management and electronic control. Its maximum continuous drain current is 4.3 A. Additionally, it has a low on-resistance of 6 mΩmax., for minimal power dissipation. This makes it suitable for use in applications like high-speed switching and high-efficiency power amplifiers and power converters.
The TK4R3E06PL,S1X device features an N-channel MOSFET which can provide high-current capabilities at very low gate voltages. This makes it an ideal choice for use in power management, high-speed switching and other control applications. The device operates by creating an electric field that is capable of controlling the flow of current between the source and drain terminals.
The performance characteristics of the TK4R3E06PL,S1X are due to its unique construction. It is power-efficient and has a low on-resistance. Additionally, its low gate-to-source voltage allows it to operate with very low voltage, while still providing high current capabilities. It also has a high-speed switching capability.
The TK4R3E06PL,S1X can be used for a variety of applications, including power management, electronic control and high-efficiency power amplifiers and power converters. It can also be used to regulate the current in a circuit. The device is also ideal for use in automotive applications, due to its low power consumption and high-frequency performance.
In conclusion, the TK4R3E06PL,S1X is a single enhancement-mode N-channel MOSFET available in a TO-252SMDS package. It is ideal for use in power management, electronic control and high-efficiency power amplifiers and power converters. It has a low on-resistance and a low gate-to-source voltage, allowing it to operate with very low voltage while still providing high current capabilities. Additionally, its high-speed switching capability makes it an excellent choice for automotive applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TK4R3A06PL,S4X | Toshiba Semi... | 1.58 $ | 601 | X35 PB-F POWER MOSFET TRA... |
| TK4R4P06PL,RQ | Toshiba Semi... | 0.5 $ | 2500 | MOSFET N-CHANNEL 60V 58A ... |
| TK4R3E06PL,S1X | Toshiba Semi... | 1.58 $ | 1594 | X35 PB-F POWER MOSFET TRA... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...