| Allicdata Part #: | TK55D10J1(Q)-ND |
| Manufacturer Part#: |
TK55D10J1(Q) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 100V 55A TO220W |
| More Detail: | N-Channel 100V 55A (Ta) 140W (Tc) Through Hole TO-... |
| DataSheet: | TK55D10J1(Q) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.3V @ 1mA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220(W) |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 140W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5700pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 27A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 55A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The TK55D10J1(Q) is a field effect transistor (FET) that is widely used in most commercial and industrial applications. It is part of the family of single FETs, which are composed of a single junction between two electrodes and two gate terminals for controlling current flow. The TK55D10J1(Q) is widely used in many applications due to its level of performance and flexibility.
The TK55D10J1(Q) is a high voltage MOSFET with an operating voltage range of up to 50V. It is rated at 10A and has a continuous drain current of 7.5A. The maximum drain-to-source voltage (V DS ) is 40V, while the on-state resistance (R DS ) is typically 7.5mΩ. The FET also has a wide range of gate capacitances, enabling it to be used in different applications.
In terms of its operating principle, the TK55D10J1(Q) has two gates, which are connected to the source. When a gate voltage is applied, the drain current is increased or decreased depending on the type of voltage applied. Typically, when a negative voltage is applied, the drain current is reduced, while a positive voltage will increase it. This makes it an ideal choice for power electronics.
The TK55D10J1(Q) is a popular choice for applications such as motor control, power supplies, power conditioning, and power conversion. It is also widely used in industrial switchmode power supplies due to its high efficiency and fast switching speed. The TK55D10J1(Q) has been further optimized for low switching noise, making it suitable for high-end applications.
The TK55D10J1(Q) provides enhanced protection against short-circuits and over-temperature conditions. Its thermal performance is also improved due to its wide thermal resistance range of 5 to 25°C. The FET also has a low on-resistance and high transconductance, which makes it suitable for applications requiring low distortion and high linearity.
Due to its wide range of specifications and features, the TK55D10J1(Q) is an ideal choice for a variety of applications. Its robust design and reliability make it suitable for high-volume, cost-sensitive applications. It is also suitable for applications that require high frequencies, due to its ability to handle high switching speeds and reduce switching noise.
The specific data is subject to PDF, and the above content is for reference
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TK55D10J1(Q) Datasheet/PDF