TK5P50D(T6RSS-Q) Allicdata Electronics
Allicdata Part #:

TK5P50D(T6RSS-Q)-ND

Manufacturer Part#:

TK5P50D(T6RSS-Q)

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 500V 5A DPAK-3
More Detail: N-Channel 500V 5A (Ta) 80W (Tc) Surface Mount D-Pa...
DataSheet: TK5P50D(T6RSS-Q) datasheetTK5P50D(T6RSS-Q) Datasheet/PDF
Quantity: 1000
2000 +: $ 0.41617
Stock 1000Can Ship Immediately
$ 0.46
Specifications
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 80W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Field-effect transistors, commonly referred to as FETs, are active semiconductor devices capable of amplification. In contrast to the bipolar transistor, the FET is unipolar, meaning that current flows only along one direction through the transistor. FETs are composed of a source, a drain, and a gate terminal. A voltage applied to the gate terminal of the FET acts to modulate the current between the source and drain terminals. This functionality is known as the "electronic switch".

FETs are classified by their structure, operation, and design. The FET type known as the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is the most common type of FET. The MOSFET can be categorized into two different types, the depletion mode and the enhancement mode MOSFET. The TK5P50D (T6RSS-Q) is an example of a single-gate enhancement-mode MOSFET.

The TK5P50D (T6RSS-Q) is designed to act as an electronic switch to modulate current between the source and drain terminals when a voltage is applied to the gate terminal. The operation of the device is as follows: when no voltage is applied to the gate terminal, current does not flow between the source and drain. When a small positive voltage is applied to the gate terminal (the threshold voltage), the MOSFET enters the \'linear region\', where the current flow between the source and drain is directly proportional to the voltage applied. As the voltage applied to the gate increases, the current through the device also increases; this is known as the \'saturation region\'. This allows the device to act as an efficient amplifier as well as a switch.

The TK5P50D (T6RSS-Q) is typically used in power management applications. For example, it is commonly used in DC-DC converters and switching regulators, where it is used to modulate the current in order to limit peak current draw or to maintain a constant output voltage. It can also be used as a switch to turn on and off power to various components of a system. For example, it is often used in automotive systems to turn the headlights on and off.

The TK5P50D (T6RSS-Q) is a versatile device that is useful in a variety of applications. It is capable of quick switching times and has a low on-resistance, making it an ideal choice for controlling current and voltage in applications such as DC-DC converters, switching regulators, and automotive systems. In addition, its simple design makes it easy to use and maintain.

The specific data is subject to PDF, and the above content is for reference

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