TK6P60W,RVQ Discrete Semiconductor Products |
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Allicdata Part #: | TK6P60WRVQTR-ND |
Manufacturer Part#: |
TK6P60W,RVQ |
Price: | $ 0.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N CH 600V 6.2A DPAK |
More Detail: | N-Channel 600V 6.2A (Ta) 60W (Tc) Surface Mount DP... |
DataSheet: | TK6P60W,RVQ Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.57707 |
Vgs(th) (Max) @ Id: | 3.7V @ 310µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 390pF @ 300V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 820 mOhm @ 3.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.2A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A TK6P60W is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is classified as a single transistor used for power applications. It is a 3-terminal, surface-mount device used in power conversion stages to handle load currents and power circuits. The "W" in the name stands for "Wafer", as the transistor is made up of a single silicon layer, which is etched into a wafer.
A MOSFET acts as a variable resistor so that it can control the flow of current. The design of a MOSFET is optimized for power applications, which facilitates higher efficiency and improved power handling. The MOSFET is driven by the gate-source voltage, which controls the flow of current, thereby providing a variable resistance between the drain and source. This functionality is due to the fact that the gate-source voltage changes the resistance between the drain and source.
In the case of the TK6P60W, the gate-source voltage moves in the range of 4V to 6V. The gate-source voltage controls the flow of current and the amount of resistance between the drain and source. As the applied voltage increases, the resistance between the drain and source decreases, and vice versa. This makes the TK6P60W suitable for applications such as bridge rectifiers, high-side switches, motor drivers, and line-lining converters where the control of current is paramount.
The TK6P60W also has a low Ron (on-state resistance), which gives it better conduction capability. It is also designed to have a fast switching speed, which is important in certain power applications. The TK6P60W has a much lower resistance compared to conventional MOSFETs, making it suitable for applications where power dissipation is a primary concern. This property also makes the TK6P60W suitable for power supplies and amplifiers.
The TK6P60W has a number of applications that make it useful in various electronic circuits. It can be used in high-current switching applications, where its low on-state resistance provides improved conduction capability. It can also be used in low-side switching applications, where its fast switching speed is beneficial. It can also be used in bridge rectifiers and line-lining converters, as its gate-source voltage control can provide regulation for these types of circuits.
The TK6P60W is an example of a simple yet effective MOSFET that can be used in a variety of applications. The gate-source voltage control makes it suitable for power handling and current regulation tasks, while its fast switching speed and low on-state resistance make it suitable for high-power switching applications. Its wide range of applications make it an attractive choice for both commercial and industrial users.
The specific data is subject to PDF, and the above content is for reference
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