Allicdata Part #: | TK6Q60WS1VQ-ND |
Manufacturer Part#: |
TK6Q60W,S1VQ |
Price: | $ 1.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N CH 600V 6.2A IPAK |
More Detail: | N-Channel 600V 6.2A (Ta) 60W (Tc) Through Hole I-P... |
DataSheet: | TK6Q60W,S1VQ Datasheet/PDF |
Quantity: | 1000 |
75 +: | $ 1.05958 |
Vgs(th) (Max) @ Id: | 3.7V @ 310µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 390pF @ 300V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 820 mOhm @ 3.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.2A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The TK6Q60W, S1VQ is a single MOSFET transistor that provides a wide range of applications in various industries. This device features small size, low noise, and low on-resistance, making it an ideal choice for many applications, including small signal and power management circuits.
A MOSFET, or metal-oxide-semiconductor field-effect transistor, is a compact and powerful semiconductor device that is used to control an electrical current. It is capable of controlling large voltages and currents over a long range. It is commonly used to create an improved version of an electrical switch, meaning that it can be used to switch an electronic circuit or systems on and off.
To understand the working principle of the TK6Q60W, S1VQ, we need to first review the basic construction of MOSFETs. MOSFET devices are made up of a metal-oxide-semiconductor gate, a source and a drain. When a voltage is applied to the gate, it creates an electric field which changes the properties of the metal-oxide-semiconductor junction, allowing current to flow through the device. In other words, the voltage applied to the gate controls the amount of current allowed to pass through the device.
Now that we understand the basic construction of the device, let\'s discuss the specific features of the TK6Q60W, S1VQ. This device has an ultra-low on-resistance of 0.54Ω, a high input capacitance of 20pF, and a small size of 0.76mm x 0.45mm. This small size and low on-resistance make the device suitable for many applications in both high frequency and large power switching circuits.
The device has several unique features that make it suitable for a wide range of applications. It is a high-frequency device, meaning that it is capable of switching frequencies from 1MHz to 4GHz. It also has low on-state resistance, which means that it will not consume a lot of power when in use. Lastly, the device is highly reliable and has a long product life, making it suitable for both consumer and industrial applications.
The TK6Q60W, S1VQ is an ideal choice for applications that require low on-resistance, small size, and high frequencies, such as small signal and power management circuits. It is also suitable for consumer as well as industrial applications due to its high operational reliability and long product life. With its many features and applications, the TK6Q60W, S1VQ is a versatile single MOSFET transistor that is sure to meet the needs of a variety of circuit designs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
TK6Q65W,S1Q | Toshiba Semi... | 1.03 $ | 375 | MOSFET N-CH 650V 5.8A IPA... |
TK6Q60W,S1VQ | Toshiba Semi... | 1.18 $ | 1000 | MOSFET N CH 600V 6.2A IPA... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...