Allicdata Part #: | TK70D06J1(Q)-ND |
Manufacturer Part#: |
TK70D06J1(Q) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 60V 70A TO220W |
More Detail: | N-Channel 60V 70A (Ta) 45W (Tc) Through Hole TO-22... |
DataSheet: | TK70D06J1(Q) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.3V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220(W) |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5450pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 87nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.4 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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TK70D06J1(Q) Application Field and Working Principle
TK70D06J1(Q) is a type of field-effect transistor (FET) that operates as a switch. This type of transistor operates with a positive gate voltage to open and close an electrical circuit, making it an ideal fit for many switching applications. The FETs are divided into two general categories, junction gate field-effect transistors (JFETs), and metal oxide semiconductor field-effect transistors (MOSFETs). TK70D06J1(Q) falls into the latter category and it works through the electrically moveable gate, which makes it suitable for a number of uses. Some of the most common applications for TK70D06J1(Q) are switching and protection.
TK70D06J1(Q) is an enhancement-mode MOSFET. It makes use of the metal-oxide-semiconductor property, which forms an inversion layer at the silicon surface when a proper voltage is applied. This layer acts as a conducting channel between the source and drain contacts. As the gate voltage increases, the electron density of this conducting channel increases as well. This change in the electron density can be used to switch and control current between the source and drain.
TK70D06J1(Q) can be used to switch a variety of low power signals, including audio and low-speed digital signals. It has the added benefit of being able to switch circuits at very low voltages, which increases its efficiency in protecting sensitive circuits. It can also be used as a low power amplifier, as it has very low input current and can amplify low level signals. The TK70D06J1(Q) also has the ability to pass modest amounts of power when a moderate voltage is applied. This makes it an ideal fit for many switching applications.
In short, the TK70D06J1(Q) is an ideal fit for many of the small scale switching and protection applications that require low power switching and protection. Its low voltage operation and its ability to pass modest amounts of power when operating at moderate voltages make it an ideal fit for many switching applications. Additionally, its low power input current and the ability to amplify low level signals makes it a perfect fit for low power amplifiers.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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TK70D06J1(Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 60V 70A TO220... |
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