TK7J90E,S1E Allicdata Electronics
Allicdata Part #:

TK7J90ES1E-ND

Manufacturer Part#:

TK7J90E,S1E

Price: $ 2.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 900V TO-3PN
More Detail: N-Channel 900V 7A (Ta) 200W (Tc) Through Hole TO-3...
DataSheet: TK7J90E,S1E datasheetTK7J90E,S1E Datasheet/PDF
Quantity: 55
1 +: $ 1.95930
25 +: $ 1.57752
100 +: $ 1.41983
500 +: $ 1.10431
1000 +: $ 0.91501
Stock 55Can Ship Immediately
$ 2.16
Specifications
Vgs(th) (Max) @ Id: 4V @ 700µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Series: π-MOSVIII
Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TK7J90E,S1E is a type of transistor, specifically a single MOSFET (metal–oxide–semiconductor field-effect transistor). Single MOSFETs are widely used for their cost efficiency, small size and low drive requirements. The TK7J90E,S1E is a MOSFET with an average drain current of 2A and a drain source voltage of 90V. It also has a fast switching speed and a low on-state resistance. These features make it suitable for use in a variety of applications.

One of the most common applications of the TK7J90E,S1E is as a switching device. The transistor can be used to switch a larger current or voltage than the input, which makes it suitable for controlling motors and other high-power devices. It can also be used to amplify weak signals by switching low-power devices such as LED\'s and other small devices.

The TK7J90E,S1E also has excellent noise immunity, making it suitable for a range of radio-frequency applications. Its fast switching capability makes it suitable for use in switching amplifiers, radio frequency circuits and other applications requiring rapid switching times.

The TK7J90E,S1E also has applications in automotive electronics. It is used in powertrain systems to switch high currents, regulating fuel injection, controlling spark timing and other applications. It can also be used in on-board diagnostic systems, controlling the mode of operation, monitoring system performance and providing feedback to the driver.

Another common application of the TK7J90E,S1E is as a power switch in portable electronic devices such as mobile phones, MP3 players and other portable devices. The low on-state resistance and small size of the MOSFET makes it suitable for low-power applications, allowing for smaller and lighter batteries.

The TK7J90E,S1E has a wide range of applications due to its cost efficiency and small size. Its fast switching speed and low on-state resistance make it suitable for switching and amplifying signals, while its noise immunity make it suitable for applications in radio frequency circuits. The transistor is also used in automotive systems and to switch high currents in portable devices.

Working principle of the TK7J90E,S1E transistor is based on the fact that it is a field-effect transistor, which means that the biasing of the gate terminal controls the current through the drain and source terminals. The gate terminal is set to a certain voltage or current, which then allows a controlled current to flow between the drain and source terminals. The gate voltage controls the drain-source current, which means that by varying the gate voltage, the current through the drain-source can be increased or decreased accordingly.

The specific data is subject to PDF, and the above content is for reference

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