TK8A55DA(STA4,Q,M)

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220SIS
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	800pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	16nC @ 10V
Series:	π-MOSVII
Rds On (Max) @ Id, Vgs:	1.07 Ohm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	7.5A (Ta)
Drain to Source Voltage (Vdss):	550V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The field of application and working principle of TK8A55DA (STA4,Q,M) transistors, which belong to the single MOSFETs section of transistors-FETs, is an important part of technology in the modern world. These transistors are utilized in many different applications and have a wide range of uses.The principle of working of a TK8A55DA (STA4,Q,M) transistor is relatively simple. This type of transistor is an insulated-gate type and consists of a source and drain junction, with a gate that is insulated from the other elements of the transistor. The source and the drain junction act as the input and output nodes respectively, while the insulated gate is the control electrode which controls the flow of current.The way that a TK8A55DA (STA4,Q,M) transistor works is based on the variations in temperature and voltage. When the voltage across the gate and the source is positive, it produces thermal energy and causes electrons to flow from the source to the drain. This flow is then used to control the output current of the device.The main advantage that the TK8A55DA (STA4,Q,M) transistor offers is its ability to perform under low leakage conditions. Its low leakage characteristics makes it suitable for use in applications where power efficiency matters, such as in power supplies and in compact digital sensing applications.Other than its low leakage properties, the TK8A55DA (STA4,Q,M) transistor is also preferred due to its wide range of temperature operating conditions. This type of transistor is capable of operating at temperatures ranging from -55°C to 175°C, thus making it suitable for use in high as well as low temperature applications.One of the most widely used application fields for the TK8A55DA (STA4,Q,M) transistor is that of low noise switching. This type of transistor is widely used in switching power supplies, amplifiers and audio equipment, due to its ability to provide minimal noise over a wide range of frequencies.The TK8A55DA (STA4,Q,M) transistor is also commonly used in digital sensing applications, as its low leakage properties make it well suited to this type of application. This type of transistor is capable of accurately detecting temperature changes and is therefore commonly used in automotive and automobile applications, such as for temperature sensing on carburetors, automatic transmission and others.A further application of the TK8A55DA (STA4,Q,M) transistor is that of analog and digital signal conditioning. This type of transistor is capable of achieving low distortion and high accuracy in signal processing applications, making it highly suitable for applications such as audio/video signal processing, analog-to-digital conversion and data encoding/decoding.Overall, the TK8A55DA (STA4,Q,M) transistor is a highly reliable transistor with a wide range of applications. Its low leakage characteristics make it suitable for power efficient and low noise applications, while its wide range of temperature operating conditions make it suitable for a range of analog and digital signal conditioning applications.

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