TK8P60W5,RVQ Discrete Semiconductor Products |
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| Allicdata Part #: | TK8P60W5RVQTR-ND |
| Manufacturer Part#: |
TK8P60W5,RVQ |
| Price: | $ 0.53 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 600V 8A DPAK |
| More Detail: | N-Channel 600V 8A (Ta) 80W (Tc) Surface Mount DPAK |
| DataSheet: |  TK8P60W5,RVQ Datasheet/PDF |
| Quantity: | 4000 |
| 2000 +: | $ 0.47165 |
| Vgs(th) (Max) @ Id: | 4.5V @ 400µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 80W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 590pF @ 300V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
| Series: | DTMOSIV |
| Rds On (Max) @ Id, Vgs: | 560 mOhm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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TK8P60W5,RVQ is one of the most wide used N-Channel Enhancement Mode MOSFETs, which is used in a variety of applications. It is a robust high-voltage device with low on-resistance, stability, and improved energy efficiency.
Overview
TKP8P60W5,RVQ is a N-Channel Enhancement Mode MOSFET manufactured by Toshiba Semiconductor. It has a maximum drain-source voltage of 565V, a drain-source on-resistance of 0.45Ohms and a maximum continuous drain current of 8A. It has on-board protection such as reverse current and switching loss protections, making it suitable for use in switching power supply and motor drive applications. It is widely used for power conversion systems and electric motor drives, making it the ideal solution for industrial equipments, home electric appliances and automotive motor control systems.
Working Principle
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of semiconductor device which is used as a switch or amplifier. Its function is based on the electric field created by a voltage differential between the drain and the source. When a voltage is applied to the gate, the device will open or close depending on the bias of the gate voltage. The TK8P60W5,RVQ is a N-Channel mode MOSFET, which means that it is more sensitive to voltage. When a positive voltage is applied to its gate, electrons from the drain channel create a depletion region between the drain and the source, which prevents current from flowing from the drain to the source, effectively turning off the MOSFET.
When the gate voltage is reduced to zero, the depletion region in the drain channel disappears and the MOSFET turns on. This allows the current to flow from the drain to the source and reach its rated value. The TK8P60W5,RVQ has a maximum drain-source on-resistance of 0.45Ohms, meaning that it is able to switch large currents without experiencing excessive losses. In addition, due to its low on-resistance, it is able to operate more efficiently than other devices in its class.
Application Field and Working Principle
TKP8P60W5,RVQ is widely used in various types of applications, such as power conversion systems, electric motor control and inverters. In power conversion systems, the MOSFET can be used in both the high and low side to control the switching of power supplies. It can also be used in motor controller circuits to control the motor speed. In inverters, the MOSFET is used to convert DC power input to AC output power. It can also be used in high current switch mode power supplies to reduce the power loss.
With its low on-resistance and high drain-source voltage ratings, the TKP8P60W5,RVQ is an ideal device for controlling large currents. Its ability to switch efficiently makes it suitable for use in motor drives, power supplies and other power conversion applications. In addition, the MOSFET’s high-voltage rating also makes it suitable for electric vehicle and other high voltage applications.
Conclusion
The TK8P60W5,RVQ is an N-Channel Enhancement Mode MOSFET, which is widely used in power converters, inverters and motor control systems. Its low on-resistance, high drain-source voltage ratings and capability to switch efficiently make it an ideal solution for a variety of applications. Its reverse current and switching loss protection make it suitable for use in high power applications, making it the ideal choice for industrial equipment and automotive motor control systems.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TK8P60W,RVQ | Toshiba Semi... | 0.79 $ | 1000 | MOSFET N CH 600V 8A DPAKN... |
| TK8P60W5,RVQ | Toshiba Semi... | 0.53 $ | 4000 | MOSFET N-CH 600V 8A DPAKN... |
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