Allicdata Part #: | TK8Q60WS1VQ-ND |
Manufacturer Part#: |
TK8Q60W,S1VQ |
Price: | $ 1.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N CH 600V 8A IPAK |
More Detail: | N-Channel 600V 8A (Ta) 80W (Tc) Through Hole I-PAK |
DataSheet: | TK8Q60W,S1VQ Datasheet/PDF |
Quantity: | 1000 |
75 +: | $ 1.31863 |
Vgs(th) (Max) @ Id: | 3.7V @ 400µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 80W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 300V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 18.5nC @ 10V |
Series: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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TK8Q60W,S1VQ is a type of semiconductors, specifically transistors. It is a type of field effect transistors (FETs). They have a small gate and hence, FETs belong to the family of metal-oxide semiconductor field-effect transistor (MOSFET). TK8Q60W,S1VQ are single-gate MOSFETs, meaning they have one main gate or control terminal.
A single-gate MOSFET has two main regions, the source and the drain, and has one main gate or control electrode. It is a four-terminal device: source, gate, drain, and substrate. The source and drain are the current carriers between the device terminals and the conductive channel between them is formed and varied by controlling the voltage applied to the gate. These transistors are also called unipolar transistors.
TK8Q60W,S1VQ are mainly used in analog and digital integrated circuit designs. These transistors are used in amplifiers, oscillators, and other linear and switching circuits. In amplifiers, they are used for impedance matching, buffer, and other gain stages, for analog circuits. As a switch, they are used in power supplies, low power amplifiers, and other devices. These transistors are also used in analog and digital applications, such as clock circuits, frequency synthesizers, digital buses, and even computer memories.
The working principle of the TK8Q60W,S1VQ is quite simple. When a voltage is applied to the gate of the transistor, it creates an electric field which attracts electrons from the substrate. This creates a thin conducting channel between the source and drain terminals, allowing a current to flow. The magnitude of the current flowing through the drain depends on the gate voltage. When the gate voltage is increased, the current through the device increases, while when the gate voltage is decreased, the current through the device decreases.
The main advantage of TK8Q60W,S1VQ is that they can be used in a wide range of applications, due to their small size and ease of use. Additionally, they offer a higher level of efficiency, reliability, and performance than traditional transistors or other discrete components. They also have a high level of immunity to electromagnetic interference, making them ideal for use in sensitive applications.
In conclusion, TK8Q60W,S1VQ are a type of single-gate MOSFETs, which are mainly used in various analog and digital integrated circuit designs. Their working principle is based on the concept of an electric field between source and drain which is controlled by the gate voltage. These transistors offer a high level of performance, efficiency, and reliability, which makes them suitable for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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