| Allicdata Part #: | TK8S06K3L(T6L1NQ)-ND |
| Manufacturer Part#: |
TK8S06K3L(T6L1,NQ) |
| Price: | $ 0.36 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 60V 8A DPAK-3 |
| More Detail: | N-Channel 60V 8A (Ta) 25W (Tc) Surface Mount DPAK+ |
| DataSheet: | TK8S06K3L(T6L1,NQ) Datasheet/PDF |
| Quantity: | 1000 |
| 2000 +: | $ 0.33472 |
| Vgs(th) (Max) @ Id: | 3V @ 1mA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK+ |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
| Series: | U-MOSIV |
| Rds On (Max) @ Id, Vgs: | 54 mOhm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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TK8S06K3L (T6L1, NQ) Application field and Working Principle
TK8S06K3L (T6L1, NQ) is a single N-channel MOSFET (metal oxide semiconductor field effect transistor). It is primarily used in applications where low-on resistance and high-off resistance are required. It is also used in applications requiring low dielectric strength such as high-speed switching, DC-DC conversion, and power switching.
What is MOSFET?
MOSFET stands for metal-oxide-semiconductor field-effect transistor. It is a three-terminal, voltage-controlled electronic device. It is an essential active component in many electric circuits. MOSFETs are used as switches and amplifiers in electronic circuits to control the electric current. They are available in different sizes and shapes.
Principles of Operation
The TK8S06K3L (T6L1, NQ) MOSFET is contains an insulated gate. When a voltage is applied to the gate, it creates an electrostatic field which changes the conductivity of the MOSFET. The MOSFET is composed of an N-type, or positively-doped, semiconductor material, and a P-type, or negatively-doped, semiconductor material. When a voltage is applied to the gate, it creates an electrostatic field which attracts electrons from the N-type region to the P-type region. The combination of the N-type and P-type materials forms a channel in the middle which allows electric current to flow when the gate voltage is applied. The current is regulated by the voltage applied to the gate.
Applications of TK8S06K3L (T6L1, NQ) MOSFET
The TK8S06K3L (T6L1, NQ) MOSFET is used in various applications because of its low-on resistance, high-off resistance, and low dielectric strength. Its applications include high-speed DC-DC conversion and power switching, power switch modulation, switching frequency adjustment, and pulse-width modulation. It is also used in power management applications such as the driving of synchronous rectifiers, phase shift amplifier circuits, and protection circuits. The TK8S06K3L (T6L1, NQ) MOSFET is commonly used in consumer electronics such as computers, cell phones, and automotive electronics.
Advantages of TK8S06K3L (T6L1, NQ) MOSFET
- Low RDS(ON) and high breakdown voltage, making it ideal for high-performance applications.
- Low gate charge, reducing power consumption.
- Low gate-source capacitance, reducing switching losses.
- High input resistance and high common-mode insulation.
- High frequency operation, making it suitable for high speed switching applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TK8S06K3L(T6L1,NQ) | Toshiba Semi... | 0.36 $ | 1000 | MOSFET N-CH 60V 8A DPAK-3... |
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TK8S06K3L(T6L1,NQ) Datasheet/PDF