TK90S06N1L,LQ Discrete Semiconductor Products |
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| Allicdata Part #: | TK90S06N1LLQTR-ND |
| Manufacturer Part#: |
TK90S06N1L,LQ |
| Price: | $ 0.70 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 60V 90A DPAK |
| More Detail: | N-Channel 60V 90A (Ta) 157W (Tc) Surface Mount TO-... |
| DataSheet: |  TK90S06N1L,LQ Datasheet/PDF |
| Quantity: | 1000 |
| 2000 +: | $ 0.63575 |
| Series: | U-MOSVIII-H |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 90A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 45A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs: | 81nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 5400pF @ 10V |
| FET Feature: | -- |
| Power Dissipation (Max): | 157W (Tc) |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-252-3 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The TK90S06N1L,LQ is a type of Field Effect Transistor (FET). FETs belong to the broad category of transistors, which are semiconductor devices used to control power amplifications, signal switching, and logic circuits. The TK90S06N1L,LQ is a type of MOSFET, which stands for Metal-Oxide-Semiconductor Field Effect Transistor. This type is specially designed to be capable of very high frequency, single transistor switch operation.
MOSFETs are also divided into two categories based on the type of channel. These are enhancement mode and depletion mode FETs. The TK90S06N1L,LQ is an enhancement mode FET. An enhancement mode FET is one in which an electric field must be applied to the gate in order to turn the transistor on. This type of transistor is particularly useful in switching applications, since it is easy to control when it will turn on and off.
The TK90S06N1L,LQ is typically used for high frequency switching applications. As such, it has very short turn on and off times, which makes it ideal for use in applications that require rapid switching, such as antennas and communication systems. Additionally, this type of MOSFET can handle high voltages and currents and is suitable for situations where high-powered switching is needed.
A MOSFET is based on the principle of the transistor. It works by controlling the applied voltage and current to a semiconductor channel that separates the source and drain terminals. When a voltage is applied to the gate terminal, it creates an electric field that changes the polarity of the channel. This causes electrons to be driven out through the channel, electrostatically controlling the current between the source and drain terminals.
The TK90S06N1L,LQ is designed for use in high frequency switching applications, such as antennas and communication systems. It has a very short turn on and off times, enabling it to be used in applications that require rapid switching. Additionally, this type of MOSFET can handle high voltages and currents, making it suitable for high-powered switching operations. This makes it a useful component in a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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