| Allicdata Part #: | TK9J90ES1E-ND |
| Manufacturer Part#: |
TK9J90E,S1E |
| Price: | $ 2.53 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 900V TO-3PN |
| More Detail: | N-Channel 900V 9A (Ta) 250W (Tc) Through Hole TO-3... |
| DataSheet: |  TK9J90E,S1E Datasheet/PDF |
| Quantity: | 2170 |
| 1 +: | $ 2.29950 |
| 25 +: | $ 1.85018 |
| 100 +: | $ 1.68575 |
| 500 +: | $ 1.36504 |
| 1000 +: | $ 1.15123 |
| Vgs(th) (Max) @ Id: | 4V @ 900µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P(N) |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 250W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.3 Ohm @ 4.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
| Drain to Source Voltage (Vdss): | 900V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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Introduction
Power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor, commonly abbreviated as MOSFET) are a type of transistor that is used in a variety of modern electronics thanks to their high efficiency, high-switching speeds, and low on-state resistance. The TK9J90ES1E is a type of Power MOSFET, and has a wide range of applications in various electrical and electronic systems due to its low on-state resistance and high-switching speed, making it suitable for use in high-frequency applications. In this article, we will look at the application fields and working principle of the TK9J90ES1E.
Application Field of TK9J90ES1E
The TK9J90ES1E is a single N-Channel MOSFET with a low on-state resistance and high-switching speed. This makes it suitable for use in high-frequency applications, such as in RF communications, power converters, and high-speed power switching circuits. It is also suitable for use in low-frequency applications such as motor control and low-voltage pulse-width-modulation circuits.
In addition to its use in power conversion and digital circuits, the TK9J90ES1E is also suitable for use in various other applications. It can be used in load switching, motor control, and various analog applications such as return-signal amplifiers and AC static relays. It can also be used in voltage-controlled attenuators and RF-amplifier controls.
Working Principle of TK9J90ES1E
The TK9J90ES1E is a type of MOSFET, which is an insulated gate field-effect transistor. The MOSFET is a three-terminal device, consisting of the source, drain and gate terminals. The MOSFET works on the principle of field effect of an electric field on a current path. When the gate terminal is activated, it produces an electric field which attracts majority carriers, or electrons in the case of n-channel MOSFETs, to the source terminal, reducing the resistance between the source and drain terminals. This reduces the on-state resistance of the device, allowing for higher switching speeds and higher electrical efficiency.
Aside from the on-state resistance, the MOSFET also has a gate-source breakdown voltage. This is the maximum voltage difference between the gate and source terminals that the device can handle before it fails. For the TK9J90ES1E, the breakdown voltage is typically around 20 V, which is suitable for most applications.
Conclusion
The TK9J90ES1E is a single N-Channel MOSFET that is suitable for use in high-frequency applications, such as in RF communications, power converters, and power switching circuits. It is also suitable for low-frequency applications such as motor control and low-voltage pulse-width-modulation circuits. The MOSFET works on the principle of field effect of an electric field on a current path, reducing the on-state resistance of the device, allowing for higher switching speeds and higher electrical efficiency.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TK9J90E,S1E | Toshiba Semi... | 2.53 $ | 2170 | MOSFET N-CH 900V TO-3PNN-... |
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