TK9P65W,RQ

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TK9P65W,RQ is one of the many types of power MOSFETs available on the market today. A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is an insulation gate field effect transistor (IGFET) that is a semiconductor device typically used as a switch or amplifier. It is a type of transistor that uses a field effect developed by voltage at the gate electrode to control the conductivity of the channel through which the current flows.

Application field: TK9P65W,RQ is a type of enhancement-mode silicon gate MOSFET, suitable for use in a variety of industrial, home and commercial applications. The device has an RDS (ON) value of 0.44 Ohm and can be used in range of applications including DC-DC converters, UPS, inverters, electronic ballast controls, general switching, low-side switching and high-speed switching.

Working principle: TK9P65W,RQ is based on the principle of a MOSFET transistor, also known as a ‘field effect transistor’. A MOSFET operates by measuring the voltage potential at the device’s gate electrode. The voltage potential is regulated by the amount of voltage applied at the gate. When the necessary voltage potential is reached and exceeds a certain value (known as the ‘threshold voltage’), the MOSFET’s channel will begin to conduct, thereby allowing current to flow between the source and drain.

In the case of TK9P65W,RQ, the MOSFET is designed to be an enhancement-mode device. In this type of device, a voltage applied at the gate electrode of the device will act to increase the impedance of the channel between source and drain and therefore reduce the current flow. This will act as an electronic switch, allowing current to be switched on and off at the gate depending on the signal applied.

The device is designed to handle higher power than other types of MOSFETs. The high power handling capability is due to the fact that TK9P65W,RQ has a low RDS (ON) value. This means that when the device is ON, it allows a larger current to flow despite the same voltage being applied at the gate electrode. This allows for greater power dissipation and allows for a more efficient device.

In addition to its high power handling capability, the device exhibits excellent switching performance. It is capable of operating at frequencies up to 250kHz, allowing for fast switching times. Moreover, it also has a low gate charge and very low gate resistance, meaning that it can be driven by low voltage sources such as low voltage logic (3.3V, 5V and 12V) without the need for additional power.

Overall, TK9P65W,RQ is a high power handling, efficient and fast switching MOSFET which is well suited for a variety of industrial, home and commercial applications. It has a low RDS (ON) value, allowing it to handle higher power than other types of MOSFETs and an excellent switching performance due to its high frequency operation. In addition, TK9P65W,RQ also has a low gate charge and very low gate resistance, reducing the need for high power sources for driving the device.

The specific data is subject to PDF, and the above content is for reference