TLP291-4(GB-TP,E)

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1. Description

The Toshiba TLP291-4(GB-TP,E) consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP291-4 is housed in the SO16 package, very small and thin coupler. Since TLP291-4 are guaranteed wide operating temperature (Ta=-55 to 110 ˚C), it’s suitable for high-density surface mounting applications such as programmable controllers and hybrid ICs. 

2. Features

    1. Collector-Emitter Voltage : 80 V (min)

    2. Current Transfer Ratio : 50% (min)

    3. Rank GB : 100% (min)

    4. Isolation Voltage : 2500 Vrms (min)

    5. Guaranteed performance over -55 to 110 ˚C

    6. UL (under preparation) : UL1577 , File No. E67349

    7. cUL (under preparation) : CSA Component Acceptance Service No.5A

    8. BSI (under prerapation) : 

        - BS EN 60065: 2002,

        - BS EN 60950-1: 2006

3. Pin Configuration