TP0101K-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | TP0101K-T1-E3CT-ND |
Manufacturer Part#: |
TP0101K-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 0.58A SOT23-3 |
More Detail: | P-Channel 20V 350mW (Ta) Surface Mount SOT-23-3 (... |
DataSheet: | TP0101K-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 50µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 350mW (Ta) |
FET Feature: | -- |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 2.2nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 580mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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The TP0101K-T1-E3 is a single N-Channel Junction Field Effect Transistor (JFET) designed for a variety of electrical applications requiring power and accuracy. JFETs result from a metal-oxide-semiconductor (MOS) superconductive device technology, meaning they are able to utilize field-effect to control off-state current flow in the direction of the channel so that the device can be exploited in ways beneficial to a given application.
The best way to describe the TP0101K-T1-E3 is a voltage-sensitive, unipolar switch designed for effecting changes in electrical resistance and current with the application of a small voltage. To operate effectively, the TP0101K-T1-E3 requires a split-gate structure that allows the triangle-shaped region at the center of the gate to be free from any metal or other obstruction that would otherwise block the flow of current.
The outstanding feature of the TP0101K-T1-E3 is that its conduction characteristics are determined by the magnitude of the electric field established by the applied drain-to-source voltage. This voltage can also determine whether or not the JFET is in use, as the drain current at this voltage is usually very small and almost nonexistent when compared to the current at other voltages. This allows for it to be used in a variety of applications, such as those requiring low-amplitude switching and those requiring the control of high-amplitude currents.
The operating principle of the TP0101K-T1-E3 is relatively simple: By applying a voltage to the gate, either positive or negative (depending on the polarity), and subsequently also to the drain and source, a positive electric field is created in the device, which attracts electrons and moves them through the semiconductive material, thereby inducing a current. This current is then controlled by the applied gate voltage. When the amount of current is required to be reduced, this can be achieved by decreasing the gate voltage.
The TP0101K-T1-E3 is best used in applications requiring low-power, low-voltage, high-current switching. This makes it particularly well-suited for digital circuits and directly controlling the on/off and dimming characteristics of light-emitting diodes (LEDs). Other applications include analog signal conditioning, voltage regulation, and audio amplifiers. In general, its intended use is in areas where very low power levels or low on-resistance characteristics are required.
In conclusion, the TP0101K-T1-E3 is a single-channel JFET that uses the principles of field-effect to modulate current flow based on the magnitude of an applied voltage. This makes it extremely versatile and applicable to a number of power- and accuracy-dependent applications. Its primary uses include digital circuit switching, voltage regulation, and regulating the on/off functions of LEDs.
The specific data is subject to PDF, and the above content is for reference
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