TP0202K-T1-E3 Discrete Semiconductor Products

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The TP0202K-T1-E3 transistor is a single consistent field effect transistor (FET) with a wide range of applications. This device is designed for use in amplifiers, switching, and low-voltage power supplies and is suitable for use in many other areas requiring low current and high performance. In this article, we will discuss the characteristics and operations of the TP0202K-T1-E3 and the various application fields and working principles of the device.

Product Overview

The TP0202K-T1-E3 is a small-signal N-channel MOSFET (Metal-Oxide Semiconductor FET) optimized for switching, small-signal amplifiers, and high-speed logic applications. It is a high-speed device that offers low on-resistance, low input capacitance, low gate charge, and exceptional breakdown voltage making it ideal for many high-performance switching and amplifier applications. The device has a maximum voltage rating of 20 V and a maximum current rating of 2.5 A. It is available in a space-saving TO-236AB package.

Characteristics and Operations

The TP0202K-T1-E3 is a low-conductance device, meaning it has low on-resistance and can handle relatively low currents due to its relatively high breakdown voltage. It also has an exceptionally low input capacitance, meaning it can respond quickly to short-duration load changes, making it an ideal choice for switching applications. Additionally, the low gate charge of the device allows for faster switching speeds and reduced power dissipation.

In addition, the TP0202K-T1-E3 has a high gain, low saturation voltage, and low gate threshold voltage, making it suitable for high-speed logic applications, as well as voltage level shifting. This device is also capable of withstanding high power surges, making it suitable for use in high-power switching applications.

Application Fields and Working Principle

The TP0202K-T1-E3 is ideal for many applications requiring low current and high performance. It is commonly used in amplifiers, low-voltage power supplies, switching applications, high-speed logic, and voltage level shifting. The device works on the principle of a field effect transistor. An electric field is used to modulate the conductivity of a semiconductor material to control the current flow. The gate voltage is proportional to the current flow through the drain, allowing for precise control of the device.

The TP0202K-T1-E3 can be used for a multitude of applications including small-signal amplifiers, logic circuits, voltage level shifting, and power control circuits. It is also suitable for use in high current switching applications, due to its high breakdown voltage and low on-resistance.

Conclusion

The TP0202K-T1-E3 is a versatile single field effect transistor device optimized for use in low current and high performance applications. It is equipped with a wide range of features, making it suitable for many solutions including amplifiers, low-voltage power supplies, switching applications, high-speed logic, and voltage level shifting. Furthermore, this device is able to withstand high power surges and its low on-resistance combined with itshigh breakdown voltage makes it suitable for use in high-current switching applications.

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