Allicdata Part #: | TP5335K1-GTR-ND |
Manufacturer Part#: |
TP5335K1-G |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET P-CH 350V 0.085A SOT23-3 |
More Detail: | P-Channel 350V 85mA (Tj) 360mW (Ta) Surface Mount ... |
DataSheet: | TP5335K1-G Datasheet/PDF |
Quantity: | 12000 |
3000 +: | $ 0.41530 |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 110pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 30 Ohm @ 200mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 85mA (Tj) |
Drain to Source Voltage (Vdss): | 350V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TP5335K1-G is an N-Channel MOS Field Effect Transistor (FET) used primarily for logic level switching applications. As a single transistor it is designed for switching operations in portable devices, low voltage digital applications, low frequency analog applications and audio circuits.
The working principle of the TP5335K1-G is based on the modulation of electron flow by electrical field. It is composed of two terminals, the drain and the gate. When a voltage is applied to the gate, it induces an electric field and causes electrons to be pushed out of the channel region in the MOSFET. This causes the channel to be depleted of electrons and the MOSFET to turn off. When the gate voltage is removed, the electrons are attracted back into the channel and the transistor turns on.
The applications of the TP5335K1-G include switching operations in low voltage digital applications, low frequency analog applications and audio circuits. It is suitable for use in logic level switching applications, such as battery charging and general switching operations. It can also be used in portable devices, audio amplifiers, and low power switching applications. It is also suitable for high speed logic control and digital signal processing applications.
The TP5335K1-G is a versatile transistor that can be used for a wide range of applications due to its low gate threshold voltage and transfer characteristics. Its low gate-source capacitance makes it a good device for switching applications requiring higher speed. The TP5335K1-G is also suitable for low frequency analog applications and audio circuits due to its high input impedance and high frequency response.
In summary, the TP5335K1-G is an N-Channel MOS Field Effect Transistor designed for logic level switching applications. It has two terminals, the drain and the gate, and can be used for a variety of applications, such as battery charging and general switching operations, audio amplifiers, high speed logic control and digital signal processing. Its low gate threshold voltage and transfer characteristics make it a good choice for applications requiring higher speed. It also has a high input impedance and high frequency response and is suitable for low frequency analog applications and audio circuits.
The specific data is subject to PDF, and the above content is for reference
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