TPCP8701(TE85L,F,M

Series:	--
Part Status:	Active
Transistor Type:	2 NPN (Dual)
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	140mV @ 20mA, 1A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	400 @ 300mA, 2V
Power - Max:	1.77W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	PS-8

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Introduction

The TPCP8701 is a high performance dual line transistor (BJT) array designed for high power applications. It consists of two lines, each with two transistors for a total of four transistors. The two lines have separate gain, bias and protection circuits, each of which has its own independent control. The TPCP8701 provides excellent reliability, extremely low EMI levels and high performance, making it an ideal choice for applications where power is critical.

TE85L, F, and M Application Field and Working Principle

The TE85L,F,and M transistors are high performance BJT arrays designed for use in high power applications. The TE85L is a low power device, while the TE85F is a higher power device. The TE85M is a medium power transistor. The TE85L, F, and M transistors are all offered in dual line configuration and feature excellent reliability, very low EMI levels, and high performance. The TE85L,F,and M transistors have a single-pole double-throw (SPDT) configuration. This means that each transistor array has two outputs, one for each line. The two lines are connected through a common base and collector, providing a simplified method for switching between the two lines. The transistors in each line can also be independently controlled by a voltage source, allowing each line to be separately activated or deactivated as needed.The working principle of the TE85L, F, and M transistors is based on BJT transistion. The BJT transistion explains why the transistors ON and OFF states cause a current to flow through, the transistors are able to provide amplification and switching from the low voltage voltage levels. By controlling the current and voltage levels of the transistor, the ON and OFF states can be controlled, providing control for the device.

Conclusion

The TPCP8701 is an ideal choice for applications requiring a high degree of power control and reliability. Its high performance, excellent EMI levels, and low power consumption make it suitable for a wide range of applications, from consumer electronics to industrial applications. The TE85L,F,and M transistors are offered in a dual line configuration and feature excellent reliability, very low EMI levels, and high performance. Their working principle is based on BJT transistion which provides control over their ON and OFF states. The TE85L, F, and M transistors are excellent choices for high power applications where power control and reliability is of paramount importance.

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