TPCP8001-H(TE85LFM Allicdata Electronics
Allicdata Part #:

TPCP8001-H(TE85LFM-ND

Manufacturer Part#:

TPCP8001-H(TE85LFM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 30V 7.2A PS-8
More Detail: N-Channel 30V 7.2A (Ta) 1W (Ta), 30W (Tc) Surface ...
DataSheet: TPCP8001-H(TE85LFM datasheetTPCP8001-H(TE85LFM Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: PS-8 (2.9x2.4)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1W (Ta), 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: U-MOSIII
Rds On (Max) @ Id, Vgs: 16 mOhm @ 3.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The TPCP8001-H (TE85LFM) is a semiconductor device that is categorized as a single, enhancement-mode MOSFET (metal-oxide-semiconductor field effect transistor). It is typically used in low side switching applications, such as solid state relays, motor control, and other applications which require continuous high current switching. This device features a low on-state resistance and a very low threshold voltage. It is offered in a high-temperature surface-mounted package and is available in different power ratings.

The basic operation of the TPCP8001-H is dependent upon the physical properties of an oxide layer which is formed on the substrate and gate terminal of the device. This oxide layer is essential to the operation of the MOSFET, as it acts as an electrical insulator and can be used to facilitate the controlled flow of current. The controlling factor is a voltage applied to the gate terminal of the transistor, which is used to control the conductive state of the device.

When the gate voltage is at or below its threshold value (VTH), the device is in the off-state. In this condition, no current flows through the device and the transistor acts as an open switch. This is because the electric field created by the applied gate voltage is insufficient to break through the insulating layer of the oxide layer. As the gate voltage increases, however, a breakdown of the insulating layer occurs and current begins to flow through the device. This is known as the enhancement state of the transistor and results in the device conducting current. With further increases in the gate voltage, the current flowing through the device is increased, known as saturation.

The TPCP8001-H is a popular choice for many low side switching applications due to its low on-state resistance, low threshold voltage, and compact package size. It is suitable for use in motor control applications, such as the control of actuators and other devices with high current requirements. It is also well suited for use in low-noise switching applications. This device has a typical breakdown voltage of 22 volts, a maximum on-state resistance of 27 milliohms, and an operating temperature range of -40 to +150 degrees celcius.

In summary, the TPCP8001-H is a single, enhancement-mode MOSFET transistor which is suitable for use in a variety of applications. It features a low on-state resistance, low-threshold voltage, and a high-temperature surface-mounted package. It is a popular choice for both low-side switching applications and motor control due to its low on-state resistance and small package size.

The specific data is subject to PDF, and the above content is for reference

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