Allicdata Part #: | TPCP8003-H(TE85L,F-ND |
Manufacturer Part#: |
TPCP8003-H(TE85L,F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 100V 2.2A PS-8 |
More Detail: | N-Channel 100V 2.2A (Ta) 840mW (Ta) Surface Mount ... |
DataSheet: | TPCP8003-H(TE85L,F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | U-MOSIII-H |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 1.1A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 840mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PS-8 (2.9x2.4) |
Package / Case: | 8-SMD, Flat Lead |
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The TPCP8003H (TE85LF) is a 5.6V N-channel PowerTrench MOSFET. It is part of the TPCP series power MOSFETs, developed by Fairchild Semiconductor. The series features many unique technologies, high-speed switching, and low turn-on voltage equivalent for increased efficiency and power density.
The TPCP8003H is an enhancement-mode MOSFET with an integrated body diode and high-side driven on-resistance providing efficient power conversion. It is designed primarily for use in power management, low-voltage motor drives, and battery management applications.
The TPCP8003H is an N-channel, enhancement-mode MOSFET with an integrated body diode. It is available in an SO-8 package and features a 100% Matte-Tin finish over Nickel. The operating temperature range is -55°C to 150°C.
The TPCP8003H has a maximum drain-source voltage of 5.6V and a maximum drain current of 8A. Its on-resistance is typically 4.3mΩ and its gate threshold voltage is typically 2.2V. Its breakdown voltage is guaranteed up to 10V and its maximum drain-source on-state resistance is a mere 4.3mΩ.
The TPCP8003H is designed to operate with low gate charge, low total gate charge, and a low turn-on voltage, making it much more efficient than other MOSFETs. It also has a low turn-on voltage (Vgs) of 2.2V, which enables it to switch on and off quickly, making it ideal for fast switching applications.
The TPCP8003H’s integrated body diode allows it to absorb reverse voltage surges and provide a high-side-driven on-resistance for improved efficiency and power density. The on-resistance is guaranteed to be less than 4.8mΩ, an impressive feat for a 5.6V drain-source MOSFET.
The TPCP8003H is an ideal choice for power management, low-voltage motor drive, and battery management applications. It is also suitable for applications such as DC-DC converters, ripple control, switching supplies, lighting control, and audio amplifiers. The device offers excellent performance and reliability with its low on-resistance and low-threshold voltage characteristics.
In conclusion, the TPCP8003H is an excellent choice for power management, low-voltage motor drive, and battery management applications. It features a low-threshold voltage and low on-resistance, making it ideal for fast switching applications. The device also has an integrated body diode, providing protection against reverse voltage surges and increased efficiency. The TPCP8003H is an ideal choice for any application requiring a low turn-on voltage, high-speed switching, and low total gate charge.
The specific data is subject to PDF, and the above content is for reference
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