TPCP8103-H(TE85LFM Allicdata Electronics
Allicdata Part #:

TPCP8103-H(TE85LFMTR-ND

Manufacturer Part#:

TPCP8103-H(TE85LFM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET P-CH 40V 4.8A PS-8
More Detail: P-Channel 40V 4.8A (Ta) 840mW (Ta) Surface Mount P...
DataSheet: TPCP8103-H(TE85LFM datasheetTPCP8103-H(TE85LFM Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: U-MOSIII-H
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
FET Feature: --
Power Dissipation (Max): 840mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PS-8 (2.9x2.4)
Package / Case: 8-SMD, Flat Lead
Description

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The TPCP8103-H (TE85LFM) is a MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) that is used to control power in applications such as DC-DC converters, switch-mode power supplies (SMPS), and other similar devices. By combining a high input impedance with a low driving power, it can be used to control small signals and higher power applications, making it a valuable addition to almost any power application. This guide will discuss the features and working principle of the TPCP8103-H device.

The TPCP8103-H is a N-Channel enhancement-mode MOSFET that is composed of four distinct layers of silicon. This structure provides a number of benefits in terms of power handling, speed of operation, and temperature stability. As a single package device, it can easily be configured to meet any specific application requirements.

The TPCP8103-H can be used to switch large amounts of power in dual-polarity applications, like DC-DC converters used in power supplie. When an input signal is applied to the Gate of the device, an electric field extends across the channel between the Source and Drain, allowing current to flow. This is known as ‘voltage enhancement.’ The benefit of this mechanism is that it allows the device to switch very quickly, making it ideal for high-frequency switching operations.

The TPCP8103-H also provides excellent temperature stability. This is a result of the device’s silicon construction, which is designed to absorb heat quickly and evenly. This ensures that the device does not experience too much thermal stress, which can cause instability in a system. In addition, the device has a low reverse transfer capacitance, which helps to maintain power delivery in switching operations.

The TPCP8103-H has a number of features that make it suitable for a wide range of applications. Its small package size, for example, makes it ideal for designs where space is limited. Additionally, it has a very low on-state resistance, which helps to reduce power consumption. It also has a high breakdown voltage, meaning it can be used in higher power applications.

The TPCP8103-H is also highly reliable, and its operation can be monitored by monitoring the device’s voltage, current, and temperature characteristics. This allows designers to ensure that the device is operating within its specified parameters, thus reducing the risk of failure and ensuring the device will perform optimally in its application.

In summary, the TPCP8103-H is an excellent device for controlling power in applications such as DC-DC converters and switch-mode power supplies. This single package device has a number of features that make it ideal for these types of applications, such as its small package size, low on-state resistance, and high reliability. It is also able to handle large amounts of power with its high breakdown voltage, making it suitable for applications requiring high power.

The specific data is subject to PDF, and the above content is for reference

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