Allicdata Part #: | TPCP8203(TE85L,F)-ND |
Manufacturer Part#: |
TPCP8203(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET 2N-CH 40V 4.7A PS-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 4.7A 360mW Sur... |
DataSheet: | TPCP8203(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 360mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | PS-8 (2.9x2.4) |
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TPCP8203(TE85L,F) Application Field and Working Principle
The TPCP8203(TE85L,F) is a Wide Band Gap Shallow Trench Isolation (STI) field effect transistor array. It is made up of power ("PA") and feedback ("FB") DMOS (Drain-MOS) with an integrated low voltage level shifter. This device is intended for use in high power applications, such as automotive lighting, automotive HVAC, professional and consumer audio, and consumer electronics.
These devices offer high performance and excellent cost-efficiency. The TPCP8203(TE85L,F) has a wide temperature range (-40°C to 125°C) and high speed switching. It has unique gate structure that allows the device to be operated in very high switching speed (<100ns). Additionally, the TPCP8203(TE85L,F) has a low RDS(ON) and is capable of delivering high peak and continuous currents.
The TPCP8203(TE85L,F) is a three-terminal N-channel device. It is composed of an arrangement of two DMOS transistors—a power DMOS (PA) and a feedback DMOS (FB)—plus a low voltage level shifter. An N-channel MOSFET channel is formed between the gates of the PA device and the FB device. This channel provides high power switching and the ability to effectively sense and generate current.
The TPCP8203(TE85L,F) operates in two distinct modes: High Side Switching and Low Side Switching. In High Side Switching, the power DMOS (PA) is the power device, and the feedback DMOS (FB) functions as a feedback device to sense the voltage and current in the load. In Low Side Switching, the power DMOS (PA) serves as the control device and the feedback DMOS (FB) is the power device.
The level shifter, meanwhile, allows the input voltage to be shifted from one level to another. This allows the power DMOS and the feedback DMOS to operate with the correct gate and drain voltages. The level shifter also allows the circuit to operate at the correct voltage levels and minimizes the risk of overvoltage noise.
In addition, the TPCP8203(TE85L,F) comes with integrated protection features, such as a positive voltage clamp and negative voltage clamp. The positive voltage clamp prevents the device from being damaged by excessive positive-bias voltages. The negative voltage clamp prevents the device from being damaged by a negative voltage. These protection features ensure the safety and reliability of the TPCP8203(TE85L,F).
The TPCP8203(TE85L,F) is a highly efficient switching device. It offers high speed switching, low RDS(ON), high peak and continuous currents, and excellent thermal performance. The integrated level shifter and protection features ensure the device operates safely and reliably. Therefore, it is an ideal choice for high power applications such as automotive lighting, automotive HVAC, professional and consumer audio, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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