Allicdata Part #: | TPD3215M-ND |
Manufacturer Part#: |
TPD3215M |
Price: | $ 142.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Transphorm |
Short Description: | CASCODE GAN HB 600V 70A MODULE |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 600V 70A (T... |
DataSheet: | TPD3215M Datasheet/PDF |
Quantity: | 77 |
1 +: | $ 129.56000 |
10 +: | $ 123.30700 |
25 +: | $ 118.83900 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Last Time Buy |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Rds On (Max) @ Id, Vgs: | 34 mOhm @ 30A, 8V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: | 2260pF @ 100V |
Power - Max: | 470W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | Module |
Supplier Device Package: | Module |
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The TPD3215M is an advanced MOSFET array that has the potential to revolutionize the electrical engineering landscape. It offers an unprecedented combination of lower switching, linear, and pulse power capabilities, which makes it ideal for a variety of applications. This article will explore some of the potential applications of the TPD3215M and explain how it works.
Applications
The TPD3215M is well suited to a variety of high power applications including motor control, RF power amplifying, and power-line switching. In motor control applications, the device can switch currents up to 60 amps and can handle up to 500 volts. This makes it ideal for applications such as AC and DC drives, pulse-width modulation, and power factor correction. Additionally, the TPD3215M is suitable for powering battery-powered equipment, as its low power consumption greatly reduces the overall power loss from the system.
In RF applications, the device’s excellent linearity ensures low distortion. This makes it perfect for applications such as amplifying television and radio signals and for use in cellular base stations. Additionally, the TPD3215M can handle up to 40 watts in peak power, which is more than enough for most applications.
Finally, the TPD3215M can be used in power-line applications. Its high-current capabilities and low on-voltage values make it suitable for high-voltage power supplies and inverters. Additionally, the TPD3215M’s low power consumption can help reduce power loss in these systems.
Working Principle
The TPD3215M is an advanced MOSFET array that is composed of two separate transistors. Each transistor is composed of three drain-source terminals, one gate terminal, and a resistor. These transistors work together to create a single, powerful unit. The TPD3215M is able to operate with higher switching speeds than most other MOSFETs, while still providing linear and pulse power capabilities.
The TPD3215M is designed such that the gate voltage has a direct relationship with the drain current. This allows for precise current control and improved efficiency. The device also contains a built-in ESD (Electro-static Discharge) protection circuit, as well as a temperature-controlled over-current protection circuit. This combination of features makes the TPD3215M an attractive choice for high power applications.
Conclusion
The TPD3215M is an advanced MOSFET array that offers a combination of low switching, linear, and pulse power capabilities. Its high current and low on-voltage values make it suitable for a variety of applications, including motor control, RF power amplifying, and power-line applications. Additionally, the device includes a temperature-controlled over-current protection circuit and an ESD protection circuit, which makes it an attractive choice for these applications. By understanding the working principle of the TPD3215M and the potential applications of the device, engineers and technicians will be able to choose the right MOSFET array for their needs.
The specific data is subject to PDF, and the above content is for reference
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