| Allicdata Part #: | TPH8R008NHL1QTR-ND |
| Manufacturer Part#: |
TPH8R008NH,L1Q |
| Price: | $ 0.50 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N CH 80V 34A SOP |
| More Detail: | N-Channel 80V 34A (Tc) 1.6W (Ta), 61W (Tc) Surface... |
| DataSheet: |  TPH8R008NH,L1Q Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.46252 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 500µA |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | 8-SOP Advance (5x5) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1.6W (Ta), 61W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 40V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
| Series: | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs: | 8 mOhm @ 17A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
| Drain to Source Voltage (Vdss): | 80V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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TPH8R008NH,L1Q is a kind of single field-effect transistor (FET) which is basically classified into a type of unipolar transistor and operates on the fundamental concepts of field effects. The transistor is specifically constructed using silicon material which due to its characteristics allows a certain amount of positive or negative current to be passed through them. It is also used in applications such as low-noise amplifiers and digital-to-analog converters. Due to its wide range of features and its ease of use, it is widely used in industrial, commercial and military applications.At its most basic level, the TPH8R008NH,L1Q is a three-terminal device with the source, gate and drain electrodes. The source electrode is heavily doped and is where the majority charge carriers, electrons and holes, start from and end at. The gate electrode is lightly doped to be relatively immune from the majority charge carriers and works by controlling the main current flow between the source and the drain. The drain electrode is also heavily doped and is where the majority charge carriers end up.
The working principle of a TPH8R008NH,L1Q is quite simple. The source and drain electrodes are connected to the power supply, with the gate electrode connected to a control voltage. When the gate voltage is increased, an electric field is created in the region between the source and drain electrodes. This causes a strong inversion layer to be generated within the substrate and the majority charge carriers are attracted to the gate electrode. These charge carriers can then pass through the device, creating a current between the source and drain. As the gate voltage increases, the current increases as well. The basic operation of the TPH8R008NH,L1Q can be demonstrated by the following diagram.
The main application of the TPH8R008NH,L1Q is in amplifiers. It is commonly used as a low-noise amplifier, as it is an efficient device with a low noise floor. The low noise floor makes it ideal for signals with low power levels, such as microphone signals or radio signal amplifying. It can also be used in analog circuits, such as signal mixing and signal shaping. In digital circuits, the TPH8R008NH,L1Q can be used as a digital-to-analog converter, as it can be easily tuned for various applications.
The TPH8R008NH,L1Q is also widely used in RF circuits, as it is an efficient device with a low noise floor. It can be used in a number of applications, such as amplifying signals from an antenna, switching, and frequency conversion. It is also used in a variety of mobile and internet-based applications, such as Wi-Fi routers and cell phone base stations. It is also used in high-end, industrial-grade equipment.
Overall, the TPH8R008NH,L1Q is a versatile FET device which can be used in a variety of applications. Due to its superior performance and its ease of use, it has become a popular choice for industrial and commercial applications. It is also widely used in military and radio applications, due to its ability to amplify weak signals without introducing noise. It is an efficient device which can be tuned for various applications, making it adaptable to many different environments and applications.
The specific data is subject to PDF, and the above content is for reference
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