
Allicdata Part #: | TPHR9203PLL1QTR-ND |
Manufacturer Part#: |
TPHR9203PL,L1Q |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | X35 PB-F POWER MOSFET TRANSISTOR |
More Detail: | N-Channel 30V 150A (Tc) 132W (Tc) Surface Mount 8-... |
DataSheet: | ![]() |
Quantity: | 5000 |
5000 +: | $ 0.55099 |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-SOP Advance (5x5) |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 132W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7540pF @ 15V |
Vgs (Max): | ±20V |
Series: | U-MOSIX-H |
Vgs(th) (Max) @ Id: | 2.1V @ 500µA |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 150A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TPHR9203PL,L1Q is a field-effect transistor, more specifically a metal-oxide semiconductor field-effect transistor (MOSFET). Such transistors are the most common type of transistor and are used in a variety of applications. In this article, we will discuss the application fields and working principle of the TPHR9203PL,L1Q.
A field-effect transistor is a three-terminal, unipolar component in which the current flow is modulated by an electric field. In the case of the TPHR9203PL,L1Q, the electric field is created by the gate terminal. The gate terminal is connected to a metal oxide layer that is capable of modulating the current flowing from the source to the drain depending on the voltage applied to the gate.
The TPHR9203PL,L1Q has an ON-resistance of 2.85 Ohms, meaning that it is capable of conducting a high amount of current with low voltage applied at the gate. This feature makes the TPHR9203PL,L1Q ideal for switching applications. For example, the MOSFET can be used in power supplies, RF amplifiers and linear regulators, as well as many other applications.
The TPHR9203PL,L1Q is also suitable for use in more specialized applications. It is capable of high-speed switching, making it useful in digital circuits such as microprocessors and digital signal processors (DSPs). It is also capable of high-frequency operation, making it suitable for use in RF circuits.
The TPHR9203PL,L1Q is a N-channel enhancement type MOSFET. This type of MOSFET operates on the principle of using a gate voltage to create an electric field across an n-type substrate. The electric field in turn affects the flow of carriers in the substrate, thus controlling the current flow from the source to the drain.
The electric field is created by applying a voltage to the gate terminal of the MOSFET. When the voltage is applied, it changes the barrier potential of the gate-source junction, resulting in a change in the current flow from drain to source. When the gate voltage is increased, the current flow is increased, while when the voltage is decreased, the current flow is decreased.
In summary, the TPHR9203PL,L1Q is a popular MOSFET with a variety of applications. It has a low ON-resistance and is capable of high frequency operation, making it suitable for high-speed switching, power supplies, and RF amplifiers. It is an N-channel enhancement-type MOSFET, which operates on the principle of using a gate voltage to modulate the current flow from the source to the drain.
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