| Allicdata Part #: | TPN6R003NLLQTR-ND |
| Manufacturer Part#: |
TPN6R003NL,LQ |
| Price: | $ 0.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N CH 30V 27A 8TSON-ADV |
| More Detail: | N-Channel 30V 27A (Tc) 700mW (Ta), 32W (Tc) Surfac... |
| DataSheet: |  TPN6R003NL,LQ Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.24687 |
| Vgs(th) (Max) @ Id: | 2.3V @ 200µA |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 700mW (Ta), 32W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
| Series: | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs: | 6 mOhm @ 13.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The TPN6R003NL,LQ transistor is a power MOSFET (metal–oxide–semiconductor field-effect transistor) operating as a single device used for power switching applications.
The device is designed for low on-resistance making it well-suited for low voltage control applications in power management and motor control. It features a low threshold voltage and high breakdown voltage, which makes it particularly suitable for low power control applications. The device is highly efficient and has an impressive stand-off voltage of 12V.
The TPN6R003NL,LQ operates by using the principles of a traditional power MOSFET. This device is commonly used in power management, motor control, and switching applications. It is also suitable for use in audio and video systems as well as digital logic levels.
In operation, the device is used to regulate and control the flow of current between a logic signal (Vgs) and the internal N-channel MOSFET (nmos) terminal. The device uses the capacitance of the channel to selectively connect or disconnect the load from the applied voltage (Vds). As Vgs varies, the capacitance of the channel changes and the connection between the source and drain terminals of the nmos are opened and closed accordingly. As with all power MOSFETs, the TPN6R003NL,LQ is sensitive to temperature, so additional cooling measures should be taken to avoid any device malfunctions.
The TPN6R003NL,LQ is well suited for many different applications because of its low on-resistance and high breakdown voltage. It can be used in switchmode power supplies, power converters, and motor control applications. It is also suitable for use in voltage interrupting systems that require high-current load switching capabilities.
In summary, the TPN6R003NL,LQ is a single power MOSFET designed for low on-resistance and high breakdown voltage. It is suitable for many power management, motor control, and switching applications. It operates by utilizing the principles of power MOSFET and is sensitive to temperature changes. The device is highly efficient and well-suited for many different power application fields.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TPN6R003NL,LQ | Toshiba Semi... | 0.27 $ | 1000 | MOSFET N CH 30V 27A 8TSON... |
| TPN6R303NC,LQ | Toshiba Semi... | 0.29 $ | 1000 | MOSFET N CH 30V 20A 8TSON... |
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