| Allicdata Part #: | TPN8R903NLLQTR-ND |
| Manufacturer Part#: |
TPN8R903NL,LQ |
| Price: | $ 0.20 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 30V 20A TSON |
| More Detail: | N-Channel 30V 20A (Tc) 700mW (Ta), 22W (Tc) Surfac... |
| DataSheet: |  TPN8R903NL,LQ Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.17859 |
| Vgs(th) (Max) @ Id: | 2.3V @ 100µA |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 700mW (Ta), 22W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 820pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.8nC @ 4.5V |
| Series: | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs: | 8.9 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The TPN8R903NL,LQ is a single insulated gate, field effect transistor (FET), specifically, an N-channel enhancement-mode FET. This type of FET is also known as an insulated gate bipolar transistor (IGBT).
Field effect transistors consist of three pins: gate, source, and drain. The gate voltage controls the drain-to-source current, making a field effect transistor an ideal switch for high-current, high-power applications. The N-channel FETs used for the TPN8R903NL,LQ feature a low gate threshold voltage, making it an ideal choice for applications requiring voltage and frequency regulation such as ac-dc converters.
The TPN8R903NL,LQ operates as an enhancement-mode FET, which means that the drain-to-source current increases with a positive gate-source voltage. In other words, the N-channel FET acts as an on/off switch depending on the voltage applied to its gate. The gate voltage must exceed the absolute threshold voltage of the FET, typically ranging between 0.5V and 2.5V, before it can turn on. When the gate is driven with a high enough voltage, the FET can handle very high drain-to-source currents.
In addition, N-channel MOSFETs tend to be more efficient than their P-channel counterparts, making them well suited for high current applications. This makes the TPN8R903NL,LQ well suited for applications in high power, low voltage environments.
The TPN8R903NL,LQ is well suited for any application that requires a fast, efficient, high-current switch, such as power management, motor control, and automotive applications. The FET offers excellent frequency response, making it suitable for switching applications that need to be turned on and off rapidly. It also offers a low thermal resistance, making it well suited for high power applications.
In summary, the TPN8R903NL,LQ is a single N-channel, enhancement-mode FET designed for applications requiring efficient and fast switches. The FET offers excellent frequency response, low thermal resistance, and is well suited for applications in high power, low voltage environments.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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| TPN8R903NL,LQ | Toshiba Semi... | 0.2 $ | 1000 | MOSFET N-CH 30V 20A TSONN... |
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