Allicdata Part #: | TPWR8503NLL1QTR-ND |
Manufacturer Part#: |
TPWR8503NL,L1Q |
Price: | $ 1.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 150A 8DSOP |
More Detail: | N-Channel 30V 150A (Tc) 800mW (Ta), 142W (Tc) Surf... |
DataSheet: | TPWR8503NL,L1Q Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.96445 |
Vgs(th) (Max) @ Id: | 2.3V @ 1mA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-DSOP Advance |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 800mW (Ta), 142W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6900pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 10V |
Series: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 0.85 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 150A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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TPWR8503NL,L1Q is a logic level, N-Channel MOSFET developed by NXP Semiconductors. This device is designed to provide excellent low gate threshold voltage operation, superior on-state performance and superior protection against ElectroStatic Discharge (ESD) compared to other standard logic-level FETs.
Applications of TPWR8503NL,L1Q includes DC-DC conversion, power switching, LED driving and load switching. The device is used for switching and controlling the DC or low power AC loads with low gate drive capability which requires minimum control power for operation. It is also suitable for commutation of step-down converters, AC/DC power conversion, battery switching and other DC power supplies.
The working principle of TPWR8503NL,L1Q is based on the MOSFET technology. It consists of three terminal one is the gate, second is the source and third is the drain. The MOSFET can be operated as a switch or as an amplifier. When the gate terminal is given with positive voltage, the MOSFET conducts current from the source to the drain and the output current is proportional to the gate voltage. The MOSFET can also be operated as an amplifier by using negative feedback to control the output voltage.
In order to protect the device from ESD, the drain and source terminals of TPWR8503NL,L1Q are protected with special ESD protection diodes. These diodes act as a protection against high voltage surges and offer superior and long lasting protection to the device from ESD.
This device is highly resistant to high temperature and can operate at temperature range between – 40°C to +150°C. It also has a low profile package and comes with a variety of packages like SOT-223, SOT-123, SOT-323, SOP-8 and SO-8, which makes it suitable for use in high-density applications.
The performance superiority of TPWR8503NL,L1Q is attributed to its low gate threshold voltage and superior on-state performance. It exhibits very low gate threshold voltage of 0.4 volts which results in very low switching power loss for design engineers making it an ideal choice for DC-DC converter, power switching and load switching applications. It also provides excellent on-state performance at currents up to 30 amperes. Besides these, the device is also capable of handling wide range of input voltage thus making it suitable for a variety of power switching applications.
Overall, TPWR8503NL,L1Q is a powerful and highly efficient device which is widely used for high density switching and controlling applications. Its low gate threshold voltage and superior on-state performance makes it an ideal choice for design engineers. Its ESD protection and wide range of packages also add to its value and make it suitable for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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