TSM5NC50CZ C0G

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The TSM5NC50CZ C0G is an N-channel enhancement mode MOSFET produced by Toshiba Semiconductor, made using their leading thin profile Trench DirectFET structure. It is a single MOSFET device that is suitable for applications such as power line switching, power supply partitioning, lighting systems, and low noise / high speed switching.

This device has a maximum drain source voltage (VDSS) of 50 volts, and its drain current (ID) is 6.5 amperes with a maximum gate-source voltage of 20 volts. This MOSFET offers excellent low gate-source capacitance, ESD protection and avalanche energy back-off to ensure maximum performance.

The TSM5NC50CZ C0G provides superior thermal protection and power dissipation through a unique package that is only 3.2mm high. It comes with a no drain source diode, which eliminates the need for an additional diode in the design, thus providing increased reliability. This device also provides an additional level of thermal protection at the drain due to its low on-resistance, which reduces the stress on other components.

The TSM5NC50CZ C0G is designed with a very low input capacitance, which allows it to be used in high-speed switching applications, such as power line switching and low noise / high speed switching applications. It is equipped with a protection diode, which eliminates the need for an additional diode in the circuit, and it has a fast switching time of only 1ns. The low input capacitance and fast switching time of this device make it suitable for high-speed digital applications.

The working principle of an N-channel enhancement mode MOSFET, such as the TSM5NC50CZ C0G, is pretty simple. When a voltage signal is applied to the gate of the transistor, it will turn the transistor on and allow current to flow from the drain to the source. The signal required to turn the device on can vary, depending on the type of MOSFET used.

When the voltage signal is below the gate threshold voltage, the device will be turned off and no current will flow. The gate threshold voltage is the amount of voltage needed to turn the MOSFET on and is essential to the operation of the device. High gate threshold voltage will make the device turn on slower and with higher power, while a low gate threshold voltage will make the device turn on faster and with less power.

The TSM5NC50CZ C0G is suitable for some of the most common applications, including power line switching, power supply partitioning, lighting systems, low noise/high speed switching, and digital applications. With its low input capacitance, fast switching time, and superior thermal protection, this MOSFET is a reliable device for many applications.

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