TT8J11TCR Discrete Semiconductor Products |
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Allicdata Part #: | TT8J11TCRTR-ND |
Manufacturer Part#: |
TT8J11TCR |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET 2P-CH 12V 3.5A TSST8 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 12V 3.5A 650mW Sur... |
DataSheet: | TT8J11TCR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10444 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate, 1.5V Drive |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A |
Rds On (Max) @ Id, Vgs: | 43 mOhm @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 6V |
Power - Max: | 650mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 8-TSST |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The TT8J11TCR is a type of pre-biased floating gate FET array. This array offers a number of advantages over conventional FET arrays. It has a two-terminal architecture that more closely resembles the architecture of single transistors, making it more flexible, reliable, and easier to design. Furthermore, the pre-biased floating gate structure eliminates the need for multiple operating voltages and provides lower on-resistance when compared to conventional FET arrays.The FET array is composed of multiple metal-oxide semiconductor field-effect transistors (MOSFETs). Each transistor in the array has a floating gate which is electrically isolated from the source and drain terminals. This floating gate is used to control the drain current of the transistor, allowing for better control of the voltage and current.The TT8J11TCR has a variety of applications in automotive and industrial applications. It can be used to control solenoid valves and motor controllers, as well as for low-power interface and data communication. In automotive applications, the array can be used for airbag deployment and speed control systems, as well as closed-loop control systems. It can also be used in automotive entertainment systems such as navigation systems.In terms of operation, the FET array works by utilizing a pre-biased floating gate. Each transistor in the array has a floating gate that is electrically isolated from both the source and drain terminals. The pre-biased floating gate is programmed by an external voltage applied to the gate electrode, allowing for better control of the bias voltage on the drain-source region. The application of an external voltage across the gate and drain terminals of the FET causes a controlled current to flow between the source and the drain. This current can be controlled through the gate voltage, and can be used to control the current in the circuit.Overall, the TT8J11TCR is a pre-biased floating gate FET array which offers a variety of advantages over conventional FET arrays. It has a two-terminal architecture that is more flexible and easier to design. Furthermore, its pre-biased floating gate structure eliminates the need for multiple operating voltages and provides lower on-resistance when compared to conventional FET arrays. It has a variety of applications in automotive and industrial applications, such as airbag deployment and speed control systems, as well as closed-loop control systems. Its operation is based on the pre-biased floating-gate structure, and is controlled through an external voltage applied to the gate electrode.
The specific data is subject to PDF, and the above content is for reference
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